生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.2 | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 10 pF | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BST84-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST84-TAPE-7 | NXP |
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TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST84TRL | YAGEO |
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Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
BST84TRL13 | NXP |
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TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86 | NXP |
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N-channel enhancement mode vertical D-MOS transistor | |
BST86135 | NXP |
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TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86T/R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 300MA I(D) | SOT-89 | |
BST86TA | DIODES |
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Small Signal Field-Effect Transistor, 0.3A I(D), 180V, 1-Element, N-Channel, Silicon, Meta | |
BST86-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |