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BST84T/R PDF预览

BST84T/R

更新时间: 2024-10-01 19:49:43
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 62K
描述
TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, MPT3, UPAK-3, FET General Purpose Small Signal

BST84T/R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.2其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.25 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BST84T/R 数据手册

 浏览型号BST84T/R的Datasheet PDF文件第2页浏览型号BST84T/R的Datasheet PDF文件第3页浏览型号BST84T/R的Datasheet PDF文件第4页浏览型号BST84T/R的Datasheet PDF文件第5页浏览型号BST84T/R的Datasheet PDF文件第6页浏览型号BST84T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BST84  
N-channel enhancement mode  
vertical D-MOS transistor  
April 1995  
Product specification  
File under Discrete Semiconductors, SC13b  

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