生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 10 pF | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BST86 | NXP |
获取价格 |
N-channel enhancement mode vertical D-MOS transistor | |
BST86135 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 300MA I(D) | SOT-89 | |
BST86TA | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.3A I(D), 180V, 1-Element, N-Channel, Silicon, Meta | |
BST86-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BST86TRL | YAGEO |
获取价格 |
Small Signal Field-Effect Transistor, 0.3A I(D), 180V, 1-Element, N-Channel, Silicon, Meta | |
BST86TRL13 | NXP |
获取价格 |
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSTC-101-D-XXX-30-T-200-LT | MAJOR-LEAGUE |
获取价格 |
Board Connector, 2 Contact(s), 2 Row(s), Male, Straight, Solder Kinked Leads Terminal, Bla | |
BSTC-101-S-XXX-22-T-200-LT | MAJOR-LEAGUE |
获取价格 |
Board Connector, 1 Contact(s), 1 Row(s), Male, Straight, Solder Kinked Leads Terminal, Bla |