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BST86-TAPE-13 PDF预览

BST86-TAPE-13

更新时间: 2024-11-24 14:48:07
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
4页 82K
描述
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

BST86-TAPE-13 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:180 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BST86-TAPE-13 数据手册

 浏览型号BST86-TAPE-13的Datasheet PDF文件第2页浏览型号BST86-TAPE-13的Datasheet PDF文件第3页浏览型号BST86-TAPE-13的Datasheet PDF文件第4页 

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