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BSR16 PDF预览

BSR16

更新时间: 2024-12-01 11:11:19
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 728K
描述
60V, 600 mA, PNP switching transistorProduction

BSR16 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.16最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):365 ns
最大开启时间(吨):40 nsBase Number Matches:1

BSR16 数据手册

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BSR16  
60V, 600 mA, PNP switching transistor  
24 April 2015  
Product data sheet  
1. General description  
PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)  
plastic package.  
NPN complement: BSR14  
2. Features and benefits  
Single general-purpose switching transistor  
AEC-Q101 qualified  
3. Applications  
Switching and linear amplification  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-60  
V
IC  
collector current  
DC current gain  
-
-
-
-600  
300  
mA  
hFE  
VCE = -10 V; IC = -150 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C  
100  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
3
C
E
1
2
3
B
E
C
base  
emitter  
collector  
B
sym132  
1
2
TO-236AB (SOT23)  
 
 
 
 
 

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