Smart Low Side Power Switch
HITFET BSP 77
Maximum Ratings at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Value
42
Unit
V
Drain source voltage
V
DS
Supply voltage for full short circuit protection
V
42
bb(SC)
1)
2)
-0.2 ... +10
Continuous input voltage
V
IN
2)
Continuous input current
I
IN
mA
-0.2V ? V ? 10V
IN
self limited
V
< -0.2V or V > 10V
IN
| I | ? 2
IN
IN
°C
W
Operating temperature
Storage temperature
T
-40 ...+150
-55 ... +150
3.8
j
T
stg
5)
Power dissipation
P
tot
T = 85 °C
C
2)
mJ
V
Unclamped single pulse inductive energy
E
250
50
AS
2)3)
Load dump protection V
= V + V
A
V
LoadDump
S
LD
V
= 0 and 10 V, td = 400 ms, R = 2 ꢀ,
I
IN
R = 6 ꢀ, V = 13.5 V
A
L
2)
Electrostatic discharge voltage (Human Body Model)
2
kV
V
ESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Thermal resistance
junction - ambient:
@ min. footprint
R
K/W
K/W
thJA
125
72
2
@ 6 cm cooling area
4)
17
junction-soldering point:
R
thJS
1
For input voltages beyond these limits I has to be limited.
IN
2
3
not subject to production test, specified by design
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
4
2 (one layer, 70µm thick) copper area for drain
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB mounted vertical without blown air.
5
not subject to production test, calculated by R
and R
thJA
ds(on)
Datasheet
2
Rev. 1.3, 2008-04-14