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BSP77 E6433 PDF预览

BSP77 E6433

更新时间: 2023-12-06 20:02:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 263K
描述
采用Smart SIPMOS技术的N通道垂直功率FET。完全受嵌入式保护功能保护。

BSP77 E6433 数据手册

 浏览型号BSP77 E6433的Datasheet PDF文件第1页浏览型号BSP77 E6433的Datasheet PDF文件第3页浏览型号BSP77 E6433的Datasheet PDF文件第4页浏览型号BSP77 E6433的Datasheet PDF文件第5页浏览型号BSP77 E6433的Datasheet PDF文件第6页浏览型号BSP77 E6433的Datasheet PDF文件第7页 
Smart Low Side Power Switch  
HITFET BSP 77  
Maximum Ratings at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
42  
Unit  
V
Drain source voltage  
V
DS  
Supply voltage for full short circuit protection  
V
42  
bb(SC)  
1)  
2)  
-0.2 ... +10  
Continuous input voltage  
V
IN  
2)  
Continuous input current  
I
IN  
mA  
-0.2V ? V ? 10V  
IN  
self limited  
V
< -0.2V or V > 10V  
IN  
| I | ? 2  
IN  
IN  
°C  
W
Operating temperature  
Storage temperature  
T
-40 ...+150  
-55 ... +150  
3.8  
j
T
stg  
5)  
Power dissipation  
P
tot  
T = 85 °C  
C
2)  
mJ  
V
Unclamped single pulse inductive energy  
E
250  
50  
AS  
2)3)  
Load dump protection V  
= V + V  
A
V
LoadDump  
S
LD  
V
= 0 and 10 V, td = 400 ms, R = 2 ,  
I
IN  
R = 6 , V = 13.5 V  
A
L
2)  
Electrostatic discharge voltage (Human Body Model)  
2
kV  
V
ESD  
according to Jedec norm  
EIA/JESD22-A114-B, Section 4  
Thermal resistance  
junction - ambient:  
@ min. footprint  
R
K/W  
K/W  
thJA  
125  
72  
2
@ 6 cm cooling area  
4)  
17  
junction-soldering point:  
R
thJS  
1
For input voltages beyond these limits I has to be limited.  
IN  
2
3
not subject to production test, specified by design  
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839  
Loaddump  
4
2 (one layer, 70µm thick) copper area for drain  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm  
connection. PCB mounted vertical without blown air.  
5
not subject to production test, calculated by R  
and R  
thJA  
ds(on)  
Datasheet  
2
Rev. 1.3, 2008-04-14  

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