BSM181

更新时间： 2024-11-08 22:48:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体电源电路开关晶体管功率场效应晶体管
页数	文件大小	规格书
7页	203K
描述
SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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中文翻译

获取价格

技术参数
数据手册

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BSM181 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Is Samacsys：	N	最大漏极电流 (Abs) (ID)：	36 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	元件数量：	1
最高工作温度：	150 °C	最大功率耗散 (Abs)：	700 W
子类别：	FET General Purpose Power	Base Number Matches：	1

BSM181 数据手册

SIMOPAC^®Module

BSM 181

BSM 181 R

V_DS

I _D

= 100 V

= 200 A

R _DS(on)= 8.5 mΩ

● Power module

● Single switch

● N channel

● Enhancement mode

● Package with insulated metal base plate

● Package outline/Circuit diagram: 1¹⁾

Type

Ordering Code

BSM 181

BSM 181 R

C67076-A1001-A2

C67076-A1016-A2

Maximum Ratings

Parameter

Symbol

V_DS

Values

800

Unit

Drain-source voltage

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

V_DGR

V_GS

800

± 20

Continuous drain current, T_C= 25 ˚C

Pulsed drain current, T_C= 25 ˚C

Operating and storage temperature range

Power dissipation, T_C= 25 ˚C

I_D

I_{D puls}

T_j, T_stg

P_tot

144

– 55 … + 150

700

˚C

Thermal resistance

Chip-case

K/W

R_{th JC}

V_is

–

≤ 0.18

2500

Insulation test voltage²⁾, t = 1 min.

Creepage distance, drain-source

Clearance, drain-source

V_ac

–

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

–

55/150/56

See chapter Package Outline and Circuit Diagrams.

Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with

DIN 50 014, IEC 146, para. 492.1.

Semiconductor Group

03.96

12 3 4 5 6 7

中文翻译

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与BSM181相关器件

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BSM181F	INFINEON	获取价格	SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)
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BSM181FR	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Met
BSM181R	INFINEON	获取价格	SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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BSM191(C)	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 1000V, 0.37ohm, 1-Element, N-Channel, Silicon, Me
BSM191/F	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Me
BSM191F	INFINEON	获取价格	SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)