是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LFBGA, BGA48,6X8,30 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最长访问时间: | 70 ns |
备用内存宽度: | 8 | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
长度: | 12 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大待机电流: | 0.0000025 A |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.061 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV8021 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8021AC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8021AI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8022 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8022BC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8022BI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8023 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8023BC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8023BI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
BS616LV8025 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |