Very Low Power CMOS SRAM
512K X 16 bit
BS616LV8016
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
ŸWide VCC operation voltage : 2.4V ~ 5.5V
n DESCRIPTION
The BS616LV8016 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.8uA at 3.0V/25OC and maximum access time of 55ns at
3.0V/85OC.
ŸVery low power consumption :
VCC = 3.0V
VCC = 5.0V
Operation current : 31mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.8uA (Typ.) at 25OC
Operation current : 76mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 3.5uA (Typ.) at 25OC
ŸHigh speed access time :
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
-55
-70
55ns(Max.) at VCC=3.0~5.5V
70ns(Max.) at VCC=2.7~5.5V
ŸAutomatic power down when chip is deselected
ŸEasy expansion with CE2, CE1 and OE options
ŸI/O Configuration x8/x16 selectable by LB and UB pin.
ŸThree state outputs and TTL compatible
The BS616LV8016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8016 is available in DICE form and 48-ball BGA
package.
ŸFully static operation, no clock, no refresh
ŸData retention supply voltage as low as 1.5V
n POWER CONSUMPTION
POWER DISSIPATION
Operating
STANDBY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
PKG TYPE
(ICCSB1, Max)
(ICC, Max)
VCC=5.0V
10MHz
VCC=3.0V
10MHz
VCC=5.0V VCC=3.0V
1MHz
9mA
fMax.
1MHz
fMax.
BS616LV8016DC
BS616LV8016FC
DICE
Commercial
25uA
50uA
4.0uA
8.0uA
39mA
40mA
75mA
1.5mA
19mA
20mA
30mA
+0OC to +70OC
BGA-48-0912
Industrial
BS616LV8016FI
10mA
76mA
2mA
31mA
BGA-48-0912
-40OC to +85OC
n PIN CONFIGURATIONS
n BLOCK DIAGRAM
1
2
3
4
5
6
A13
A12
A11
A
B
C
D
E
F
LB
OE
A0
A1
A2
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
NC
A10
A9
A8
A7
A6
A5
A4
Address
Input
1024
Memory Array
10
Row
Decoder
Buffer
1024 x 8192
DQ8
DQ9
VSS
UB
A3
A5
A4
A6
CE1
DQ1
DQ3
DQ4
DQ5
WE
DQ10
DQ11
8192
DQ0
Column I/O
16
16
A17
VSS
A14
A12
A9
A7
Data
Input
Buffer
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
.
16
16
.
VCC DQ12
DQ14 DQ13
A16
A15
A13
A10
Data
Output
Buffer
.
.
512
Column Decoder
DQ15
9
CE2
CE1
WE
OE
UB
G
H
DQ15
A18
NC
A8
Address Input Buffer
Control
A11
LB
A14 A15 A16 A17 A18 A0 A1 A2 A3
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616LV8016
Revision 2.3
May. 2006
1