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BS616LV2016_08 PDF预览

BS616LV2016_08

更新时间: 2024-12-01 07:15:27
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 242K
描述
Very Low Power CMOS SRAM 128K X 16 bit

BS616LV2016_08 数据手册

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Very Low Power CMOS SRAM  
128K X 16 bit  
BS616LV2016  
Pb-Free and Green package materials are compliant to RoHS  
„ FEATURES  
„ DESCRIPTION  
y Wide VCC operation voltage : 2.4V ~ 5.5V  
y Very low power consumption :  
The BS616LV2016 is a high performance, very low power CMOS  
Static Random Access Memory organized as 131,072 by 16 bits and  
operates form a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both  
high speed and low power features with maximum CMOS standby  
current of 2/20uA at Vcc=3V/5V at 85OC and maximum access time  
of 55/70ns.  
VCC = 3.0V  
Operation current : 30mA (Max.) at 55ns  
2mA (Max.) at 1MHz  
Standby current : 0.7/2uA (Max.) at 70/85OC  
Operation current : 62mA (Max.) at 55ns  
8mA (Max.) at 1MHz  
VCC = 5.0V  
Standby current : 6/20uA (Max.)at 70/85OC  
y High speed access time :  
Easy memory expansion is provided by an active LOW chip enable  
(CE) and active LOW output enable (OE) and three-state output  
drivers.  
The BS616LV2016 has an automatic power down feature, reducing  
the power consumption significantly when chip is deselected.  
The BS616LV2016 is available in DICE form, JEDEC standard  
44-pin TSOP II package and 48-ball BGA package.  
-55  
-70  
55ns(Max.) at VCC=3.0~5.5V  
70ns(Max.) at VCC=2.7~5.5V  
y Automatic power down when chip is deselected  
y Easy expansion with CE and OE options  
y I/O Configuration x8/x16 selectable by LB and UB pin.  
y Three state outputs and TTL compatible  
y Fully static operation  
y Data retention supply voltage as low as 1.5V  
„ POWER CONSUMPTION  
POWER DISSIPATION  
Operating  
STANDBY  
PRODUCT  
FAMILY  
OPERATING  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
TEMPERATURE  
VCC=5.0V  
10MHz  
VCC=3.0V  
10MHz  
VCC=5.0V VCC=3.0V  
1MHz  
7mA  
fMax.  
1MHz  
fMax.  
BS616LV2016DC  
BS616LV2016EC  
BS616LV2016AI  
BS616LV2016EI  
DICE  
Commercial  
6.0uA  
20uA  
0.7uA  
2.0uA  
39mA  
40mA  
60mA  
1.5mA  
14mA  
15mA  
29mA  
+0OC to +70OC  
TSOP II-44  
BGA-48-0608  
TSOP II-44  
Industrial  
8mA  
62mA  
2mA  
30mA  
-40OC to +85OC  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
A4  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
A3  
2
A6  
A2  
3
A7  
A1  
4
OE  
A11  
A10  
A9  
A0  
5
UB  
CE  
6
LB  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
A16  
A15  
A14  
A13  
A12  
7
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
8
A8  
A7  
A6  
A5  
A4  
A3  
A2  
Address  
Input  
1024  
Memory Array  
10  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Row  
Decoder  
BS616LV2016EC  
BS616LV2016EI  
Buffer  
1024 x 2048  
2048  
A8  
A9  
DQ0  
.
.
.
.
.
.
Data  
16  
Column I/O  
A10  
A11  
NC  
16  
Input  
.
.
.
.
.
.
Buffer  
Write Driver  
Sense Amp  
16  
1
2
3
4
5
6
16  
Data  
Output  
Buffer  
128  
NC  
A
B
C
D
E
F
LB  
OE  
A0  
A1  
A2  
Column Decoder  
DQ15  
D8  
D9  
UB  
D10  
D11  
D12  
D13  
NC  
A3  
A5  
A4  
A6  
CE  
D1  
D0  
D2  
7
CE  
WE  
OE  
UB  
LB  
Address Input Buffer  
Control  
VSS  
VCC  
D14  
D15  
NC  
NC  
NC  
A14  
A12  
A9  
A7  
D3  
VCC  
VSS  
D6  
A12 A13 A14 A15 A16  
A1  
A0  
A16  
A15  
A13  
A10  
D4  
VCC  
VSS  
D5  
G
H
WE  
A11  
D7  
A8  
NC  
48-ball BGA top view  
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.  
R0201-BS66LV2016  
Revision  
1.5  
1
Oct.  
2008  

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