Datasheet > BS616LV1623TCG70

BS616LV1623TCG70

更新时间： 2024-11-29 22:28:31

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
10页	258K
描述
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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BS616LV1623TCG70 数据手册

Very Low Power/Voltage CMOS SRAM

1M x 16 or 2M x 8 bit switchable

BSI

BS616LV1623

FEATURES

DESCRIPTION

• Vcc operation voltage : 2.7 ~ 3.6V

• Very low power consumption :

The BS616LV1623 is a high performance, very low power CMOS Static

Random Access Memory organized as 1,048,676 words by 16 bits or

2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc

range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 3.0uA at 3.0V/25^oC and maximum access time of 55ns at 3.0V/85^oC .

This device provide three control inputs and three states output drivers

for easy memory expansion.

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.) CMOS standby current

• High speed access time :

-55

-70

55ns

70ns

The BS616LV1623 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1623 is available in 48-pin 12mmx20mm TSOP1 package.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

TEMPERATURE

Vcc

RANGE

(ICCSB1, Max)

(ICC, Max)

PRODUCT FAMILY

PKG TYPE

55ns : 3.0~3.6V

70ns : 2.7~3.6V

Vcc=3V

70ns

Vcc=3V

55ns

BS616LV1623TC

BS616LV1623TI

+0 ^OC to +70^O

-40^OC to +85^O

2.7V ~ 3.6V

55 / 70

45mA

36mA TSOP1-48(12mmx20mm)

20 uA

37mA

46mA

TSOP1-48(12mmx20mm)

BLOCK DIAGRAM

PIN CONFIGURATIONS

A19

A15

A14

A13

A12

A11

A10

Address

Input

/OE

/UB

/LB

CE2

SAE

D15

D14

D13

D12

Vss

Vcc

D11

D10

4096

Row

Decoder

Memory Array

4096 x 4096

/CE1

Buffer

A17

Vcc

CIO

Vss

4096

BS616LV1623TC

BS616LV1623T I

Data

Input

16(8)

Column I/O

Buffer

Write Driver

Sense Amp

A19

16(8)

256(512)

Data

Output

Buffer

/WE

A18

A17

A16

Column Decoder

D15

A10

A11

A12

A13

CE1

CE2

A15

A14

16(18)

Control

Address Input Buffer

A16 A0 A1 A2 A3

A18(SAE)

CIO

48-pin 12mmx20mm TSOP1 top view

Vdd

Vss

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 1.1

Jan. 2004

R0201-BS616LV1623

12 3 4 5 6 7...10

中文翻译

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与BS616LV1623TCG70相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1623TCP55	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TCP70	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TI	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TI55	BSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PDSO48
BS616LV1623TI-55	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TI70	BSI	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PDSO48
BS616LV1623TI-70	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TIG55	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TIG70	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616LV1623TIP55	ETC	获取价格	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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