Datasheet > BS0604NS2Q6740-S4175

BS0604NS2Q6740-S4175

更新时间： 2024-11-01 23:35:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	103K
描述
TRANSISTOR MOSFET SO-8

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中文翻译

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数据手册

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BS0604NS2Q6740-S4175 数据手册

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Preliminary data

BSO604NS2

OptiMOS =Power-Transistor

Feature

Product Summary

• Dual N-Channel

• Enhancement mode

• Logic Level

mΩ

DS(on)

•150 °C operating temperature

• Avalanche rated

• dv/dt rated

Type

Package

Ordering Code

Marking

BSO604NS2

P-DSO-8-6

Q67060-S7309

2N604L

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C, one channel active

T =70°C, one channel active

Pulsed drain current, one channel active

D puls

T =25°C

Avalanche energy, single pulse

I =5 A , V =25V, R =25Ω

kV/µs

Reverse diode dv/dt

dv/dt

I =5A, V =44V, di/dt=200A/µs, T =150°C

jmax

Gate source voltage

±20

tot

Power dissipation, one channel active

T =25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +150

55/150/56

°C

T , T

stg

Page 1

2000-10-06

12 3 4 5 6 7 8

中文翻译

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