Datasheet > BR93G76FVJ-3

BR93G76FVJ-3

更新时间： 2024-11-10 12:26:23

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
39页	947K
描述
Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BR93G76FVJ-3 数据手册

Datasheet

Serial EEPROM series Standard EEPROM

MicroWire BUS EEPROM (3-Wire)

BR93G76-3

●General Description

BR93G76-3 is serial EEPROM of serial 3-line Interface method.

They are dual organization(by 16bit or 8bit) and it is selected by the input of ORG PIN.

●Features

●Packages W(Typ.) x D(Typ.)x H(Max.)

■ 3-line communications of chip select, serial clock,

serial data input / output (the case where input and

output are shared)

■ Operations available at high speed 3MHz clock

(4.5 V~5.5 V)

■ High speed write available (write time 5ms max.）

■ Same package and pin configuration from 1Kbit to

16Kbit

DIP-T8

9.30mm x 6.50mm x 7.10mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

■ 1.7~5.5V single power source operation

■ Address auto increment function at read operation

■ Write mistake prevention function

» Write prohibition at power on

SOP8

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

» Write prohibition by command code

5.00mm x 6.20mm x 1.71mm

Write mistake prevention function at low voltage

■ Self-timed programming cycle

■ Program condition display by READY / BUSY

■ Dual organization : by 16 bit (X16) or 8 bit (X8)

■ Compact package

SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/

TSSOP-B8J/DIP-T8/VSON008X2030

■ More than 40 years data retention

■ More than 1 million write cycles

■ Initial delivery state all addresses FFFFh (X16) or

FFh (X8)

SOP- J8

MSOP8

4.90mm x 6.00mm x 1.65mm

2.90mm x 4.00mm x 0.90mm

SSOP-B8

3.00mm x 6.40mm x 1.35mm

VSON008X2030

2.00mm x 3.00mm x 0.60mm

●BR93G76-3

Power source

voltage

VSON008

X2030

DIP-T8^*1SOP8

SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8

Capacity

Bit format

Type

8Kbit

512×16 or1024×8 BR93G76-3

1.7~5.5V

●

*1 DIP-T8 is not halogen free package

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ22111・14・001

TSZ02201-09190G100070-1-2

07.JAN.2013 REV.001

1/36

12 3 4 5 6 7...39

中文翻译

下载PDF

与BR93G76FVJ-3相关器件

型号	品牌	获取价格	描述	数据表
BR93G76FVJ-3A	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ3AE2	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ-3AE2	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ3ATR	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ-3ATR	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ-3B	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ3BE2	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ-3BE2	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ3BTR	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76FVJ-3BTR	ROHM	获取价格	Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)

与BR93G76FVJ-3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

24
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

23
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

50
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

40

产品中心

服务支持

精选活动

关于我们

帮助中心

BR93G76FVJ-3

BR93G76FVJ-3 数据手册

与BR93G76FVJ-3相关器件

与BR93G76FVJ-3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BR93G76FVJ-3

BR93G76FVJ-3 数据手册

与BR93G76FVJ-3相关器件

与BR93G76FVJ-3相关文章

您还可以找

您在本页遇到什么问题？