SILICON BRIDGE RECTIFIERS
BR600 - BR610
BR6
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
0.445 (11.30)
0.405 (10.30)
0.158 (4.00)
AC
0.142 (3.60)
FEATURES :
0.62 (15.75)
0.58 (14.73)
* High current capability
* High surge current capability
* High reliability
0.127 (3.20)
0.047 (1.20)
AC
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
0.042 (1.06)
0.038 (0.96)
0.75 (19.1)
Min.
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
0.27 (6.9)
0.23 (5.8)
Dimensions in inches and ( millimeters )
* Weight : 3.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610
RATING
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC Blocking Voltage
100
1000
IF(AV)
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current,
IFSM
200
A
Single half sine wave Superimposed
on rated load (JEDEC Method)
I2t
VF
A2S
V
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF =3 A.
64
1.0
10
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
IR(H)
200
8.0
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
°C/W
°C
RqJC
TJ
- 40 to + 150
- 40 to + 150
TSTG
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
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Rev. 02 : March 24, 2005