5秒后页面跳转
BR34L02FV-W PDF预览

BR34L02FV-W

更新时间: 2024-02-15 11:25:30
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器
页数 文件大小 规格书
25页 539K
描述
256? bit Electrically Erasable PROM

BR34L02FV-W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.59
最大时钟频率 (fCLK):0.1 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e2长度:4.4 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN COPPER端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BR34L02FV-W 数据手册

 浏览型号BR34L02FV-W的Datasheet PDF文件第2页浏览型号BR34L02FV-W的Datasheet PDF文件第3页浏览型号BR34L02FV-W的Datasheet PDF文件第4页浏览型号BR34L02FV-W的Datasheet PDF文件第5页浏览型号BR34L02FV-W的Datasheet PDF文件第6页浏览型号BR34L02FV-W的Datasheet PDF文件第7页 
BR34L02FV-W  
Memory ICs  
256×8 bit Electrically Erasable PROM  
(based on Serial Presence Detect)  
BR34L02FV-W  
The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area,  
developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is  
a memory IC that reads ID in order for the Plug & Play feature to operate.  
I2C BUS is a registered trademark of Philips.  
z Applications  
General purpose  
z Features  
1) 256k registers × 8 bits serial architecture  
2) Single power supply (1.8V to 5.5V)  
3) Two wire serial interface  
4) Page Write Function (16byte)  
5) Write Protect Mode  
Write protect 1 (Onetime Rom)  
Write protect 2 (Hardwire WP PIN)  
6) Low Power consumption  
: 00h to 7Fh  
: 00h to FFh  
Write (5V)  
Read (5V)  
: 1.2mA (Typ.)  
: 0.2mA (Typ.)  
: 0.1µA (Typ.)  
Standby (5V)  
7) DATA security  
Write protect feature (WP pin)  
Inhibit to WRITE at low VCC  
8) Small package - - - - - - SSOP-B8 pin  
9) High reliability fine pattern CMOS technology  
10) Endurance : 1,000,000 erase/write cycles  
11) Data retention : 40years  
12) Filtered inputs in SCLSDA for noise suppression  
13) Initial data FFh in all address  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
V
CC  
0.3 to +6.5  
300(SSOP-B8)  
65 to +125  
40 to +85  
1  
Power dissipation  
Storage temperature  
Operating temperature  
Terminal voltage  
Pd  
Tstg  
Topr  
mW  
°C  
°C  
V
0.3 to VCC+0.3  
1 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.  
Rev.A  
1/24  

与BR34L02FV-W相关器件

型号 品牌 获取价格 描述 数据表
BR34L02FV-W_09 ROHM

获取价格

DDR1/DDR2 For memory module) SPD Memory
BR34L02FV-WE2 ROHM

获取价格

2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BR34L02-W ROHM

获取价格

2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BR35 TAYCHIPST

获取价格

MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR35 PANJIT

获取价格

MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR35 SUNMATE

获取价格

3.0A Patch Schottky diode 50V SMB series
BR-35 LGE

获取价格

Single-phase Silicon Bridge Rectifier
BR350 ETC

获取价格

35 AMPERE SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR3500 EIC

获取价格

SILICON BRIDGE RECTIFIERS
BR3500 SYNSEMI

获取价格

SILICON BRIDGE RECTIFIERS