Datasheet > BR34L02FV-W_09

BR34L02FV-W_09

更新时间： 2024-01-14 05:07:21

品牌	Logo	应用领域
罗姆 - ROHM		光电二极管双倍数据速率
页数	文件大小	规格书
18页	432K
描述
DDR1/DDR2 For memory module) SPD Memory

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中文翻译

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数据手册

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BR34L02FV-W_09 数据手册

Double-cell Memory for Plug & Play

DDR1/DDR2

(For memory module) SPD Memory

No.09002EAT04

BR34L02FV-W

●Description

BR34L02FV-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features

1) 256×8 bit architecture serial EEPROM

2) Wide operating voltage range: 1.7V-5.5V

3) Two-wire serial interface

4) High reliability connection using Au pads and Au wires

5) Self-Timed Erase and Write Cycle

6) Page Write Function (16byte)

7) Write Protect Mode

Write Protect 1 (Onetime Rom)

Write Protect 2 (Hardwire WP PIN) : 00h-FFh

8) Low Power consumption

Write ( at 5V ) :1.2mA (typ.)

Read ( at 5V ) :0.2mA(typ.)

Standby ( at 5V ) :0.1µA(typ.)

9) DATA security

: 00h-7Fh

Write protect feature (WP pin)

Inhibit to WRITE at low VCC

10)Compact package: SSOP-B8

11)High reliability fine pattern CMOS technology

12)Rewriting possible up to 1,000,000 times

13)Data retention: 40 years

14)Noise reduction Filtered inputs in SCL / SDA

15)Initial data FFh at all addresses

●Absolute Maximum Ratings (Ta=25℃)

Parameter

Supply Voltage

Power Dissipation

Storage Temperature

Operating Temperature

Terminal Voltage

Symbol

VCC

Tstg

Topr

Rating

-0.3～+6.5

300*

-65～+125

-40～+85

-0.3～VCC+0.3

Unit

℃

* Reduce by 3.0 mW/C over 25C

●Recommended operating conditions

Parameter Symbol

Supply Voltage

Input Voltage

Rating

1.7～5.5

0～VCC

Unit

VCC

ＶIN

●Memory cell characteristics(Ta=25℃, VCC=1.7V～5.5V)

Specification

Parameter

Unit

Min.

1,000,000

Typ.

Max.

Write / Erase Cycle

Cycles

Years

Data Retention

*1:Not 100% TESTED

www.rohm.com

2009.04 - Rev.A

1/17

12 3 4 5 6 7...18

中文翻译

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