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BR25H640FJ-2CE2 PDF预览

BR25H640FJ-2CE2

更新时间: 2024-02-07 01:53:52
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
34页 952K
描述
Serial EEPROM Series Automotive EEPROM

BR25H640FJ-2CE2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP-8Reach Compliance Code:compliant
Factory Lead Time:16 weeks风险等级:1.72
其他特性:ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:LSOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.65 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.0055 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):4 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

BR25H640FJ-2CE2 数据手册

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Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation SPI BUS EEPROM  
BR25H640-2C  
General Description  
BR25H640-2C is a serial EEPROM of SPI BUS interface method.  
Features  
„
„
„
High speed clock action up to 10MHz (Max.)  
Wait function by HOLDB terminal.  
Part or whole of memory arrays settable as read only  
memory area by program.  
„
„
TSSOP-B8, SOP8, SOP-J8 Package  
Initial delivery state: FFh, status register  
WPEN, BP1, BP0 : 0  
„
„
„
More than 100 years data retention.  
More than 1 million write cycles.  
AEC-Q100 Qualified.  
„
„
2.5V to 5.5V single power source action most  
suitable  
for battery use.  
Page write mode useful for initial value write at  
factory shipment.  
Package  
„
„
„
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  
Self-timed programming cycle.  
Low Supply Current  
At write operation (5V): 1.1mA (Typ.)  
At read operation (5V) : 1.0mA (Typ.)  
At standby operation (5V): 0.1μA (Typ.)  
Address auto increment function at read operation  
Prevention of write mistake  
„
„
Write prohibition at power on.  
TSSOP-B8  
SOP8  
Write prohibition by command code (WRDI).  
Write prohibition by WPB pin.  
3.00mm x 6.40mm x 1.20mm 5.00mm x 6.20mm x 1.71mm  
Write prohibition block setting by status registers  
(BP1, BP0).  
Prevention of write mistake at low voltage.  
SOP-J8  
4.90mm x 6.00mm x 1.65mm  
Page write  
Number of pages  
32 Byte  
Product Number  
BR25H640-2C  
BR25H640-2C  
Capacity  
64Kbit  
Bit Format  
8Kx8  
Product Number  
BR25H640-2C  
Supply Voltage  
2.5V to 5.5V  
TSSOP-B8  
SOP8  
SOP-J8  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
©2013 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100120-1-2  
12.Mar.2013 Rev.001  
1/31  

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