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BR25H020FVT-WE2 PDF预览

BR25H020FVT-WE2

更新时间: 2024-02-04 05:37:10
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
17页 1138K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8

BR25H020FVT-WE2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.6
最大时钟频率 (fCLK):5 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3/e2长度:4.4 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.25 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN/TIN COPPER端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:10宽度:3 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BR25H020FVT-WE2 数据手册

 浏览型号BR25H020FVT-WE2的Datasheet PDF文件第4页浏览型号BR25H020FVT-WE2的Datasheet PDF文件第5页浏览型号BR25H020FVT-WE2的Datasheet PDF文件第6页浏览型号BR25H020FVT-WE2的Datasheet PDF文件第8页浏览型号BR25H020FVT-WE2的Datasheet PDF文件第9页浏览型号BR25H020FVT-WE2的Datasheet PDF文件第10页 
Command mode  
Ope code  
BR25L080-W  
BR25L160-W  
BR25L320-W  
BR25L640-W  
Command  
Contents  
BR25L010-W  
BR25L020-W  
BR25L040-W  
WREN Write enable  
WRDI Write disable  
READ Read  
Write enable command 0000 * 110  
0000  
* 110 0000 0110  
Write disable command 0000 * 100 0000 * 100 0000 0100  
Read command  
Write command  
0000 * 011 0000 A8011 0000 0011  
0000 * 010 0000 A8010 0000 0010  
WRITE Write  
Status register read  
command  
RDSR  
Read status register  
0000 * 101 0000 * 101 0000 0101  
0000 * 001 0000 * 001 0000 0001  
Status register write  
command  
WRSR Write status register  
Timing chart  
1. Write enable (WREN) / disable (WRDI) cycle  
1.WREN (WRITE ENABLE) : Write enable  
CS  
SCK  
0
1
2
3
4
5
6
1
7
0
SI  
0
0
0
0
* 1  
1
High-Z  
SO  
Don't care  
*1 BR25L010/020/040-W=  
BR25L080/160/320/640-W=  
Fig. 35 Write enable command  
“0” input  
1.WRDI (WRITE DISABLE) : Write disable  
CS  
SCK  
SI  
0
1
2
3
4
5
6
7
0
0
0
0
* 1  
1
0
0
High-Z  
SO  
Don't care  
-W=  
*1 BR25L010/020/040  
BR25L080/160/320/640  
Fig. 36 Write disable  
“0” input  
-W=  
This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is  
set to write disable status by write disable command. As for these commands, set CS LOW, and then input the respective  
ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks, command  
becomes valid.  
When to carry out write and write status register command, it is necessary to set write enable status by the write enable  
command. If write or write status register command is input in the write disable status, commands are cancelled. And even  
in the write enable status, once write and write status register command is executed once, it gets in the write disable  
status. After power on, this IC is in write disable status.  
7/16  

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