5秒后页面跳转
BR25H020FJ-W PDF预览

BR25H020FJ-W

更新时间: 2024-01-18 17:00:14
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 1148K
描述
HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type

BR25H020FJ-W 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:SOIC包装说明:LSOP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.41最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G8长度:5 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:LSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

BR25H020FJ-W 数据手册

 浏览型号BR25H020FJ-W的Datasheet PDF文件第1页浏览型号BR25H020FJ-W的Datasheet PDF文件第2页浏览型号BR25H020FJ-W的Datasheet PDF文件第4页浏览型号BR25H020FJ-W的Datasheet PDF文件第5页浏览型号BR25H020FJ-W的Datasheet PDF文件第6页浏览型号BR25H020FJ-W的Datasheet PDF文件第7页 
Pin assignment and description  
Terminal name Input/Output  
Function  
Power source to be connected  
All input / output reference voltage, 0V  
Chip select input  
Serial clock input  
Start bit, ope code, address, and serial data input  
Serial data output  
Vcc  
HOLDB SCK  
SI  
Vcc  
GND  
CSB  
SCK  
SI  
Input  
Input  
Input  
Output  
BR25H010-W  
BR25H020-W  
BR25H040-W  
BR25H080-W  
BR25H160-W  
BR25H320-W  
SO  
Hold input  
HOLDB  
WPB  
Input  
Input  
Command communications may be suspended temporarily  
(HOLD status)  
Write protect input  
CSB  
SO  
WPB  
GND  
Write command is prohibited *1  
Write status register command is prohibited.  
*1:BR25H010/020/040-W  
Fig.2 Pin assignment diagram  
Operating timing characteristics  
Sync data input  
timing  
/
output  
(Ta=-40~+125°C, unless otherwise specified, load capacity CL1=100pF)  
2.5Vcc5.5V  
Min. Typ. Max  
Parameter  
Symbol  
Unit  
tCSS  
tCS  
CSB  
SCK  
tSCKS  
SCK frequency  
SCK high time  
SCK low time  
CSB high time  
CSB setup time  
CSB hold time  
SCK setup time  
SCK hold time  
SI setup time  
fSCK  
tSCKWH  
tSCKWL  
tCS  
5
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tRC  
tFC  
tSCKWH  
tSCKWL  
tDIS  
85  
85  
85  
90  
85  
90  
90  
20  
30  
tDIH  
SI  
High-Z  
SO  
tCSS  
tCSH  
tSCKS  
tSCKH  
tDIS  
Fig.3 Input timing  
SI is taken into IC inside in sync with data rise edge of SCK.  
Input address and data from the most significant bit MSB.  
tCS  
SI hold time  
tDIH  
70  
Data output delay time1  
Data output delay time1  
(CL2=30pF)  
tPD1  
tSCKH  
CSB  
tCSH  
SCK  
SI  
tPD2  
55  
ns  
tPD  
tRO,tFO  
tOZ  
tOH  
High-Z  
Output hold time  
Output disable time  
HOLDB setting  
setup time  
HOLDB setting  
hold time  
HOLDB release  
setup time  
HOLDB release  
hold time  
Time from HOLDB  
to output High-Z  
Time from HOLDB  
To output change  
SCK rise time  
SCK fall time  
tOH  
tOZ  
0
100  
ns  
ns  
SO  
Fig.4 Input / Output timing  
tHFS  
tHFH  
tHRS  
tHRH  
tHOZ  
tHPD  
0
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
SO is output in sync with data fall edge of SCK. Data is output  
from the most significant bit MSB.  
"H"  
CSB  
"L"  
tHFS tHFH  
tHRS tHRH  
SCK  
SI  
70  
tDIS  
n
n+1  
n-1  
tHOZ  
Dn  
tHPD  
High-Z  
100  
70  
SO  
Dn+1  
Dn  
Dn-1  
HOLDB  
Ж1  
tRC  
tFC  
1
1
μs  
μs  
Ж1  
Fig.5 HOLD timing  
Ж1  
OUTPUT  
rise time  
OUTPUT  
fall time  
tRO  
50  
ns  
Ж1  
tFO  
50  
5
ns  
Write time  
tE/W  
ms  
Ж1 NOT 100% TESTED  
AC measurement conditions  
Limits  
Min. Typ. Max  
Parameter  
Symbol  
Unit  
Load capacity 1  
Load capacity 2  
Input rise time  
Input fall time  
Input voltage  
CL1  
CL2  
100  
30  
50  
pF  
pF  
ns  
ns  
V
50  
0.2Vcc/0.8Vcc  
0.3Vcc/0.7Vcc  
Input / Output judgment voltage  
V
3/16  

与BR25H020FJ-W相关器件

型号 品牌 描述 获取价格 数据表
BR25H020FJ-WC ROHM EEPROM, 256X8, Serial, CMOS, PDSO8, ROHS COMPLIANT, SOP-8

获取价格

BR25H020FJ-WCE2 ROHM EEPROM, 256X8, Serial, CMOS, PDSO8, SOP-8

获取价格

BR25H020FJ-WE2 ROHM HIGH GRADE Specification HIGH RELIABILITY ser

获取价格

BR25H020FVJ-WE2 ROHM EEPROM, 256X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8

获取价格

BR25H020FVJ-WTR ROHM High Reliability Serial EEPROMs SPI BUS Serial EEPROMs

获取价格

BR25H020FVM-2C ROHM BR25H020-2C是SPI BUS接口方式的串行EEPROM。

获取价格