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BR25H020F-W

更新时间： 2024-02-21 23:13:33
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 1148K
描述
HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type

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中文翻译

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BR25H020F-W 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
零件包装代码：SOIC包装说明：LSOP,
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.41最大时钟频率 (fCLK)：5 MHz
JESD-30 代码：R-PDSO-G8长度：5 mm
内存密度：2048 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
端子数量：8字数：256 words
字数代码：256工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：256X8封装主体材料：PLASTIC/EPOXY
封装代码：LSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.6 mm串行总线类型：SPI
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：4.4 mm最长写入周期时间 (tWC)：5 ms
Base Number Matches：1

BR25H020F-W 数据手册

 浏览型号BR25H020F-W的Datasheet PDF文件第3页浏览型号BR25H020F-W的Datasheet PDF文件第4页浏览型号BR25H020F-W的Datasheet PDF文件第5页浏览型号BR25H020F-W的Datasheet PDF文件第7页浏览型号BR25H020F-W的Datasheet PDF文件第8页浏览型号BR25H020F-W的Datasheet PDF文件第9页 
●Features  
○Status registers  
This IC has status registers. The status registers are of 8 bits and express the following parameters.  
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are  
valid even when power source is turned off.  
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.  
WEN can be set by write enable command and write disable command. WEN becomes write disable status when power  
source is turned off. R/B is for write confirmation, therefore cannot be set externally.  
The value of status register can be read by read status command.  
●Status registers  
Product number  
BR25H010-W  
BR25H020-W  
BR25H040-W  
BR25H080-W  
BR25H160-W  
BR25H320-W  
bit 7  
1
bit 6  
1
bit 5  
1
bit 4  
1
bit 3  
BP1  
bit 2  
BP0  
bit 1  
bit 0  
R/B  
WEN  
R/B  
WPEN  
0
0
0
BP1  
BP0  
WEN  
Memory  
bit  
Function  
Contents  
location  
WPB pin enable / disable designation bit  
WPEN=0=invalid  
This enables / disables the functions  
of WPB pin.  
WPEN EEPROM  
WPEN=1=valid  
This designates the write disable area  
of EEPROM. Write designation areas  
of product numbers are shown below.  
BP1  
EEPROM  
BP0  
EEPROM write disable block designation bit  
Write and write status register write enable / disable status confirmation bit  
WEN Register  
WEN=0=prohibited  
WEN=1=permitted  
Write cycle status (READY / BUSY) status confirmation bit  
R/B=0=READY  
Register  
R/B  
R/B=1=BUSY  
●Write disable block setting  
Write disable block  
BP1 BP0  
BR25H010-W  
None  
BR25H020-W  
None  
BR25H040-W  
BR25H080-W  
None  
BR25H160-W BR25H320-W  
0
0
1
1
0
1
0
1
None  
None  
None  
60h-7Fh  
40h-7Fh  
00h-7Fh  
C0h-FFh  
80h-FFh  
00h-FFh  
180h-1FFh  
100h-1FFh  
000h-1FFh  
300h-3FFh  
200h-3FFh  
000h-3FFh  
600h-7FFh  
400h-7FFh  
000h-7FFh  
C00h-FFFh  
800h-FFFh  
000h-FFFh  
○
WPB pin  
By setting WPB=LOW, write command is prohibited. As for BR25H080, 160, 320-W, only when WPEN bit is set “1”, the WPB  
pin functions become valid. And the write command to be disabled at this moment is WRSR. As for BR25H010, 020,040-W,  
both WRITE and WRSR commands are prohibited.  
However, when write cycle is in execution, no interruption can be made.  
Product number  
WRSR  
WRITE  
BR25H010-W  
BR25H020-W  
BR25H040-W  
BR25H080-W  
BR25H160-W  
BR25H320-W  
Prohibition  
possible  
Prohibition  
possible  
Prohibition possible  
but WPEN bit “1”  
Prohibition  
impossible  
○HOLDB pin  
By HOLDB pin, data transfer can be interrupted. When SCK=”1”, by making HOLDB from “1” into”0”, data transfer to  
EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.  
6/16  
1...3456789...17

中文翻译

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