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BR25H010FVM-2C PDF预览

BR25H010FVM-2C

更新时间: 2024-12-02 11:08:15
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
35页 1449K
描述
BR25H010-2C是SPI BUS接口方式的串行EEPROM。

BR25H010FVM-2C 数据手册

 浏览型号BR25H010FVM-2C的Datasheet PDF文件第2页浏览型号BR25H010FVM-2C的Datasheet PDF文件第3页浏览型号BR25H010FVM-2C的Datasheet PDF文件第4页浏览型号BR25H010FVM-2C的Datasheet PDF文件第5页浏览型号BR25H010FVM-2C的Datasheet PDF文件第6页浏览型号BR25H010FVM-2C的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation SPI BUS EEPROM  
BR25H010-2C  
General Description  
BR25H010-2C is a serial EEPROM of SPI BUS interface method.  
Features  
High speed clock action up to 10MHz (Max.)  
Wait function by HOLDB terminal.  
Part or whole of memory arrays settable as read only  
memory area by program.  
MSOP8, TSSOP-B8, SOP8, SOP-J8 Package  
Data at shipment Memory array: FFh, status register  
BP1, BP0 : 0  
More than 100 years data retention.  
More than 1 million write cycles.  
AEC-Q100 Qualified.  
2.5V to 5.5V single power source action most  
suitable  
for battery use.  
Page write mode useful for initial value write at  
factory shipment.  
Package  
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  
Self-timed programming cycle.  
Low Supply Current  
At write operation (5V)  
At read operation (5V)  
At standby operation (5V)  
: 1.0mA (Typ.)  
: 1.0mA (Typ.)  
: 0.1μA (Typ.)  
Address auto increment function at read operation  
Prevention of write mistake  
Write prohibition at power on.  
MSOP8  
TSSOP-B8  
Write prohibition by command code (WRDI).  
Write prohibition by WPB pin.  
2.90mm x 4.00mm x 0.90mm  
3.00mm x 6.40mm x 1.20mm  
Write prohibition block setting by status registers  
(BP1, BP0).  
Prevention of write mistake at low voltage.  
SOP8  
SOP-J8  
5.00mm x 6.20mm x 1.71mm  
4.90mm x 6.00mm x 1.65mm  
Page write  
Number of pages  
16 Byte  
Product Number  
BR25H010-2C  
BR25H010-2C  
Capacity  
1Kbit  
Bit format  
128x8  
Product Number  
BR25H010-2C  
Supply Voltage  
2.5V to 5.5V  
MSOP8  
TSSOP-B8  
SOP8  
SOP-J8  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
©2013 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100070-1-2  
27.Jan.2016 Rev.002  
1/32  

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