Datasheet > BR25H010FVT-2C

BR25H010FVT-2C

更新时间： 2024-12-02 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
35页	1449K
描述
BR25H010-2C是SPI BUS接口方式的串行EEPROM。

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数据手册

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BR25H010FVT-2C 数据手册

Datasheet

Serial EEPROM Series Automotive EEPROM

125℃ Operation SPI BUS EEPROM

BR25H010-2C

●General Description

BR25H010-2C is a serial EEPROM of SPI BUS interface method.

●Features



High speed clock action up to 10MHz (Max.)

Wait function by HOLDB terminal.

Part or whole of memory arrays settable as read only

memory area by program.



MSOP8, TSSOP-B8, SOP8, SOP-J8 Package

Data at shipment Memory array: FFh, status register

BP1, BP0 : 0



More than 100 years data retention.

More than 1 million write cycles.

AEC-Q100 Qualified.



2.5V to 5.5V single power source action most

suitable

for battery use.

Page write mode useful for initial value write at

factory shipment.

●Package



For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)

Self-timed programming cycle.

Low Supply Current

At write operation (5V)

At read operation (5V)

At standby operation (5V)

: 1.0mA (Typ.)

: 0.1μA (Typ.)



Address auto increment function at read operation

Prevention of write mistake

Write prohibition at power on.

MSOP8

TSSOP-B8

Write prohibition by command code (WRDI).

Write prohibition by WPB pin.

2.90mm x 4.00mm x 0.90mm

3.00mm x 6.40mm x 1.20mm

Write prohibition block setting by status registers

(BP1, BP0).

Prevention of write mistake at low voltage.

SOP8

SOP-J8

5.00mm x 6.20mm x 1.71mm

4.90mm x 6.00mm x 1.65mm

●Page write

Number of pages

16 Byte

Product Number

BR25H010-2C

●BR25H010-2C

Capacity

1Kbit

Bit format

128x8

Product Number

BR25H010-2C

Supply Voltage

2.5V to 5.5V

MSOP8

TSSOP-B8

SOP8

SOP-J8

●

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ22111・14・001

TSZ02201-0R1R0G100070-1-2

27.Jan.2016 Rev.002

1/32

12 3 4 5 6 7...35

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