Datasheet > BR25G512FGE2

BR25G512FGE2

更新时间： 2024-12-02 01:10:19

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
33页	833K
描述
Serial EEPROM Series Standard EEPROM

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BR25G512FGE2 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

SPI BUS EEPROM

BR25G512-3

General Description

BR25G512-3 is a 512Kbit serial EEPROM of SPI BUS interface.

Features

Packages W(Typ) x D(Typ) x H(Max)



High Speed Clock Action up to 10MHz (Max)

Wait Function by HOLDB Terminal

Part or Whole of Memory Arrays Settable as

Read only Memory Area by Program

1.8V to 5.5V Single Power Source Operation Most

Suitable for Battery Use.



SOP8



UP to 128Byte in Page Write Mode.

For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)

Self-timed Programming Cycle

SOP- J8

4.90mm x 6.00mm x 1.65mm

5.00mm x 6.20mm x 1.71mm

Low Current Consumption



At Write Action (5V)

At Read Action (5V)

At Standby Action (5V) : 0.1µA (Typ)

0.7mA (Typ)

2.4mA (Typ)



Address Auto Increment Function at Read Action

 Prevention of Write Mistake

TSSOP-B8



Write Prohibition at Power On

Write Prohibition by Command Code (WRDI)

Write Prohibition by WPB Pin

Write Prohibition Block Setting by Status Registers

(BP1, BP0)

3.00mm x 6.40mm x 1.20mm

Figure 1.



Prevention of Write Mistake at Low Voltage

More than 100 years Data Retention.

More than 1 Million Write Cycles.

Bit Format 64K×8



Initial Delivery Data

Memory Array: FFh

Status Register: WPEN, BP1, BP0 : 0

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R2R0G100740-1-2

6.Oct.2015 Rev.001

1/30

TSZ22111･14･001

12 3 4 5 6 7...33

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