Datasheet > BR25G256FVT-3GE2

BR25G256FVT-3GE2

更新时间： 2024-12-01 01:10:15

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
35页	2226K
描述
SPI BUS EEPROM

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数据手册

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BR25G256FVT-3GE2 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

SPI BUS EEPROM

BR25G256-3

General Description

BR25G256-3 is a 256Kbit serial EEPROM of SPI BUS interface.

Features

Packages W(Typ) x D(Typ) x H(Max)



High Speed Clock Action up to 20MHz (Max)

Wait Function by HOLDB Terminal

Part or Whole of Memory Arrays Settable as Read

only Memory Area by Program



1.6V to 5.5V Single Power Source Operation Most

Suitable for Battery Use.

DIP-T8

9.30mm x 6.50mm x 7.10mm

SOP- J8

4.90mm x 6.00mm x 1.65mm



UP to 64 Byte in Page Write Mode.

For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)

Self-timed Programming Cycle

Low Current Consumption



At Write Action (5V)

At Read Action (5V)

At Standby Action (5V) : 0.1µA (Typ)

Address Auto Increment Function at Read Action

Prevention of Write Mistake

0.6mA (Typ)

2.0mA (Typ)



SOP8

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

5.00mm x 6.20mm x 1.71mm



Write Prohibition at Power On

Write Prohibition by Command Code (WRDI)

Write Prohibition by WPB Pin

Write Prohibition Block Setting by Status Registers

(BP1, BP0)

Figure 1.



Prevention of Write Mistake at Low Voltage

More than 100 years Data Retention.

More than 1 Million Write Cycles.

Bit Format 32K×8



Initial Delivery Data

Memory Array: FFh

Status Register: WPEN, BP1, BP0 : 0

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R2R0G100640-1-2

04.Dec.2014 Rev.002

1/31

TSZ22111･14･001

12 3 4 5 6 7...35

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