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BR2506A1 PDF预览

BR2506A1

更新时间: 2024-11-13 20:47:19
品牌 Logo 应用领域
扬杰 - YANGJIE 局域网二极管
页数 文件大小 规格书
4页 189K
描述
Bridge Rectifier Diode, 1 Phase, 25A, 600V V(RRM), Silicon,

BR2506A1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:S-PUFM-D4Reach Compliance Code:unknown
风险等级:5.78其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-PUFM-D4最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BR2506A1 数据手册

 浏览型号BR2506A1的Datasheet PDF文件第2页浏览型号BR2506A1的Datasheet PDF文件第3页浏览型号BR2506A1的Datasheet PDF文件第4页 
RoHS  
BR25005(W) THRU BR2510(W)  
COMPLIANT  
Bridge Rectifiers  
Features  
●UL recognition, file #E230084  
Universal 3-way terminals: snap-on, wire  
wrap-around, or PCB mounting  
●High surge current capability  
●Low thermal resistance  
+
~ ~  
●Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave  
rectification for power supply, home appliances,  
office equipment, industrial automation applications.  
~
+
~
~
Mechanical Data  
ackage: BR,BR-W  
P
Molding compound meets UL 94 V-0  
flammability rating, RoHS-compliant  
Terminals: Tin plated leads, solderable  
per J-STD-002 and JESD22-B102  
Suffix letter “W” added to indicate wire  
leads(e.g. BR2510W  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
BR2501  
BR2501  
100  
BR2502  
BR2502  
200  
BR2504  
BR2504  
400  
BR2506  
BR2506  
600  
BR2508  
BR2508  
800  
BR2510  
BR2510  
1000  
PARAMETER  
SYMBOL UNIT  
BR25005  
BR25005  
50  
Device marking code  
V
Repetitive Peak Reverse Voltage  
V
A
RRM  
Average Rectified Output Current  
@60Hz sine wave, R-load, With heatsink,  
Tc=55℃  
I
O
25  
Surge(Non-repetitive)Forward Current  
@60H  
sine Wave, 1 cycle,  
I
Z Half-  
T =25℃  
A
FSM  
I2t  
400  
a
Current Squared Time @1ms≤t≤8.3ms  
Tj=25, Rating of per diode  
A2S  
660  
Storage Temperature  
Junction Temperature  
T
-55 ~+150  
stg  
T
j
-55 ~+150  
Dielectric Strength, Terminals to case,  
AC 1 minute  
Vdis  
KV  
2.5  
10  
TOR  
kg·cm  
Mounting Torque  
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
BR2501 BR2502 BR2504 BR2506 BR2508 BR2510  
BR25005  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.1  
10  
FM  
I
=12.5A  
=V  
FM  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
I
RRM  
V
μA  
RM RRM  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-C014  
Rev. 2.1, 28-Apr-15  
www.21yangjie.com  

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