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BR24G128FVT-3AGE2 PDF预览

BR24G128FVT-3AGE2

更新时间: 2024-11-08 14:48:07
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 1828K
描述
EEPROM, 16KX8, Serial, CMOS, PDSO8, 3 X 6.40 MM, 1.20 MM HEIGHT, HALOGEN FREE, TSSOP-8

BR24G128FVT-3AGE2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
风险等级:1.65最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

BR24G128FVT-3AGE2 数据手册

 浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第2页浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第3页浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第4页浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第5页浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第6页浏览型号BR24G128FVT-3AGE2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Standard EEPROM  
I2C BUS EEPROM (2-Wire)  
BR24Gxxx-3A (128K 256K 1M)  
General Description  
BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method  
Features  
Packages W(Typ) x D(Typ)x H(Max)  
All controls available by 2 ports of serial clock(SCL) and  
serial data(SDA)  
Other devices than EEPROM can be connected to the  
same port, saving microcontroller port  
1.7V to 5.5V Single Power Source Operation most  
suitable for battery use  
TSSOP-B8  
3.00mm x 6.40mm x 1.20mm  
DIP-T8  
9.30mm x 6.50mm x 7.10mm  
1.7V to 5.5V wide limit of operating voltage, possible  
1MHz operation  
Page Write Mode useful for initial value write at factory  
shipment  
SOP8  
TSSOP-B8J  
3.00mm x 4.90mm x 1.10mm  
Self-timed Programming Cycle  
Low Current Consumption  
5.00mm x 6.20mm x 1.71mm  
Prevention of Write Mistake  
Write (Write Protect) Function added  
Prevention of Write Mistake at Low Voltage  
More than 1 million write cycles  
More than 40 years data retention  
Noise filter built in SCL / SDA terminal  
Initial delivery state FFh  
MSOP8  
2.90mm x 4.00mm x 0.90mm  
SOP-J8  
4.90mm x 6.00mm x 1.65mm  
VSON008X2030  
2.00mm x 3.00mm x 0.60mm  
SSOP-B8  
3.00mm x 6.40mm x 1.35mm  
Figure 1.  
Page Write  
Number of Pages  
64Byte  
256Byte  
BR24G128-3A  
BR24G256-3A  
Product Number  
BR24G1M-3A  
BR24G128-3A  
Power Source  
Capacity  
Bit Format  
Type  
Package  
DIP-T8  
Voltage  
BR24G128-3A  
BR24G128F-3A  
SOP8  
BR24G128FJ-3A  
BR24G128FV-3A  
BR24G128FVT-3A  
BR24G128FVJ-3A  
BR24G128FVM-3A  
BR24G128NUX-3A  
SOP-J8  
SSOP-B8  
TSSOP-B8  
TSSOP-B8J  
MSOP8  
128kbit  
16k×8  
1.7V to 5.5V  
VSON008X2030  
Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
© 2014 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R2R0G100020-1-2  
18.Jun.2015 Rev.006  
1/36  

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