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BR24A32FJ-WME2 PDF预览

BR24A32FJ-WME2

更新时间: 2024-11-23 12:55:07
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
31页 705K
描述
Serial EEPROM Series Automotive EEPROM

BR24A32FJ-WME2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.77
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:105 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.775 mm
串行总线类型:I2C最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

BR24A32FJ-WME2 数据手册

 浏览型号BR24A32FJ-WME2的Datasheet PDF文件第2页浏览型号BR24A32FJ-WME2的Datasheet PDF文件第3页浏览型号BR24A32FJ-WME2的Datasheet PDF文件第4页浏览型号BR24A32FJ-WME2的Datasheet PDF文件第5页浏览型号BR24A32FJ-WME2的Datasheet PDF文件第6页浏览型号BR24A32FJ-WME2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
105Operation I2C BUS EEPROM (2-Wire)  
BR24Axxx-WM  
(1K 2K 4K 8K 16K 32K 64K)  
General Description  
BR24Axxx-WM is a serial EEPROM of I2C BUS interface method.  
Features  
Packages W(Typ.) x D(Typ.) x H(Max.)  
„ Completely conforming to the world standard I2C BUS.  
All controls available by 2 ports of serial clock  
(SCL) and serial data (SDA)  
„ Wide temperature range -40to +105℃  
„ Other devices than EEPROM can be connected to  
the same port, saving microcontroller port  
„ 2.5V to 5.5V single power source operation most  
suitable for battery use  
SOP8  
5.00mm x 6.20mm x 1.71mm  
„ Page write mode useful for initial value write at  
factory shipment  
„ Auto erase and auto end function at data rewrite  
„ Low current consumption  
¾
¾
¾
At write operation (5V)  
At read operation (5V)  
At standby condition (5V) : 0.1μA (Typ.)  
: 1.2mA (Typ.) *1  
: 0.2mA (Typ.)  
SOP- J8  
4.90mm x 6.00mm x 1.65mm  
„ Write mistake prevention function  
¾
¾
Write (write protect) function added  
Write mistake prevention function at low voltage  
„ Data rewrite up to 1,000,000 times(Ta25℃)  
„ Data kept for 40 years(Ta25℃)  
„ Noise filter built in SCL / SDA terminal  
„ Shipment data all address FFh  
*1 BR24A32-WM, BR24A64-WM : 1.5mA  
MSOP8  
2.90mm x 4.00mm x 0.90mm  
Page write  
Number of Pages  
8Byte  
16Byte  
32Byte  
BR24A04-WM  
BR24A08-WM  
BR24A16-WM  
Product  
number  
BR24A01A-WM  
BR24A02-WM  
BR24A32-WM  
BR24A64-WM  
BR24Axxx-WM  
Capacity  
1Kbit  
Bit format  
128×8  
256×8  
512×8  
1K×8  
Type  
Power source voltage  
SOP8  
SOP-J8  
MSOP8  
BR24A01A-WM  
BR24A02-WM  
BR24A04-WM  
BR24A08-WM  
BR24A16-WM  
BR24A32-WM  
BR24A64-WM  
2.5V to 5.5V  
2.5V to 5.5V  
2.5V to 5.5V  
2.5V to 5.5V  
2.5V to 5.5V  
2.5V to 5.5V  
2.5V to 5.5V  
2Kbit  
4Kbit  
8Kbit  
16Kbit  
32Kbit  
64Kbit  
2K×8  
4K×8  
8K×8  
Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0R1R0G100140-1-2  
31.Aug.2012 Rev.001  
©2012 ROHM Co., Ltd. All rights reserved.  
1/28  
TSZ2211114001  

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