Datasheet > BR211SM

BR211SM

更新时间： 2022-11-26 11:16:13

品牌	Logo	应用领域
恩智浦 - NXP		二极管击穿二极管
页数	文件大小	规格书
6页	34K
描述
Breakover diodes

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BR211SM 数据手册

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface

mounting, plastic envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

SYMBOL

PARAMETER

MIN.

MAX. UNIT

BR211SM-140 to BR211SM-280

Breakover voltage

Holding current

Non-repetitive peak current

V_(BO)

I_H

I_TSM

140

150

280

handling

capability.

Typical

application is transient overvoltage

protection in telecommunications

equipment.

OUTLINE - SOD106

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

Non repetitive peak current

75% of

V_(BO)typ

I_TSM1

10/320 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM2

Non repetitive on-state current half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

I²t

dI_T/dt

I²t for fusing

t_p= 10 ms

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

P_TM

T_stg

T_a

Continuous dissipation

Peak dissipation

T_a= 25˚C

t_p= 1 ms; T_a= 25˚C

1.2

˚C

Storage temperature

- 40

150

Operating ambient temperature off-state

Overload junction temperature on-state

T_vj

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

R_{th j-a}

Z_{th j-a}

Thermal resistance junction to

solder point

K/W

Thermal resistance junction to pcb mounted; minimum footprint

100

2.62

ambient

Thermal impedance junction to t_p= 1 ms

ambient

August 1996

Rev 1.100

12 3 4 5 6

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