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BQ4010YMA-70N PDF预览

BQ4010YMA-70N

更新时间： 2024-01-20 11:07:03
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 747K
描述
8Kx8 Nonvolatile SRAM

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BQ4010YMA-70N 技术参数

是否无铅：含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, DIP-28
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.41风险等级：5.79
Is Samacsys：N最长访问时间：70 ns
JESD-30 代码：R-XDMA-T28长度：37.72 mm
内存密度：65536 bit内存集成电路类型：NON-VOLATILE SRAM MODULE
内存宽度：8功能数量：1
端子数量：28字数：8192 words
字数代码：8000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8KX8封装主体材料：UNSPECIFIED
封装代码：DIP封装等效代码：DIP28,.6
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V认证状态：Not Qualified
座面最大高度：9.53 mm最大待机电流：0.004 A
子类别：SRAMs最大压摆率：0.075 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：18.415 mmBase Number Matches：1

BQ4010YMA-70N 数据手册

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