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BQ4011MA-150 PDF预览

BQ4011MA-150

更新时间: 2024-01-15 11:08:51
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 728K
描述
32Kx8 Nonvolatile SRAM

BQ4011MA-150 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.79
Is Samacsys:N最长访问时间:150 ns
JESD-30 代码:R-XDMA-T28内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子位置:DUALBase Number Matches:1

BQ4011MA-150 数据手册

 浏览型号BQ4011MA-150的Datasheet PDF文件第2页浏览型号BQ4011MA-150的Datasheet PDF文件第3页浏览型号BQ4011MA-150的Datasheet PDF文件第4页浏览型号BQ4011MA-150的Datasheet PDF文件第5页浏览型号BQ4011MA-150的Datasheet PDF文件第6页浏览型号BQ4011MA-150的Datasheet PDF文件第7页 
bq4011/bq4011Y  
32Kx8 Nonvolatile SRAM  
At t his tim e t he integr a l ener gy  
Features  
Data retention in the absence of  
General Description  
source is switched on to sustain the  
memory until after VCC returns valid.  
The CMOS bq4011 is a nonvolatile  
262,144-bit static RAM organized as  
32,768 words by 8 bits. The integral  
control circuitry and lithium energy  
source provide reliable nonvolatility  
coupled with th e unlim ited write  
cycles of standard SRAM.  
power  
The bq4011 uses an extremely low  
s t a n dby cu r r en t CMOS SRAM,  
coupled with a small lithium coin cell  
to provide nonvolatility without long  
write-cycle times and the write-cycle  
limitations associated with EEPROM.  
Automatic write-protection  
during power-up/power-down  
cycles  
Industry-standard 28-pin 32K x  
8 pinout  
Th e con tr ol cir cu it r y con s ta n t ly  
monitors the single 5V supply for an  
ou t -of-t oler a n ce con dit ion . Wh en  
VCC falls out of tolerance, the SRAM  
is unconditionally write-protected to  
prevent inadvertent write operation.  
The bq4011 requires no external cir-  
cuitry and is socket-compatible with  
industry-standard SRAMs and most  
EPROMs and EEPROMs.  
Conventional SRAM operation;  
unlimited write cycles  
10-year minimum data retention  
in absence of power  
Battery internally isolated until  
power is applied  
Pin Connections  
Pin Names  
Block Diagram  
A0 –A14  
Address inputs  
DQ0–DQ7 Data input/output  
CE  
Chip enable input  
Output enable input  
Write enable input  
+5 volt supply input  
Ground  
OE  
WE  
VCC  
VSS  
Selection Guide  
Maximum  
Access  
Negative  
Supply  
Maximum  
Access  
Negative  
Supply  
Part  
Part  
Number  
Time (ns)  
Tolerance  
Number  
Time (ns)  
Tolerance  
bq4011Y-70  
70  
-10%  
-10%  
-10%  
-10%  
bq4011 -100  
bq4011Y -100  
bq4011Y -150  
bq4011Y -200  
100  
150  
200  
-5%  
-5%  
-5%  
100  
150  
200  
bq4011 -150  
bq4011 -200  
Aug. 1993 C  
1

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