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BQ4011MA-200 PDF预览

BQ4011MA-200

更新时间: 2024-01-13 01:12:14
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 728K
描述
32Kx8 Nonvolatile SRAM

BQ4011MA-200 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:ROHS COMPLIANT, PLASTIC, DIP-28针数:28
Reach Compliance Code:unknown风险等级:5.82
最长访问时间:200 nsJESD-30 代码:R-PDMA-P28
JESD-609代码:e3内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
湿度敏感等级:NOT SPECIFIED功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:COMMERCIAL最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:TIN
端子形式:PIN/PEG端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

BQ4011MA-200 数据手册

 浏览型号BQ4011MA-200的Datasheet PDF文件第2页浏览型号BQ4011MA-200的Datasheet PDF文件第3页浏览型号BQ4011MA-200的Datasheet PDF文件第4页浏览型号BQ4011MA-200的Datasheet PDF文件第5页浏览型号BQ4011MA-200的Datasheet PDF文件第6页浏览型号BQ4011MA-200的Datasheet PDF文件第7页 
bq4011/bq4011Y  
32Kx8 Nonvolatile SRAM  
At t his tim e t he integr a l ener gy  
Features  
Data retention in the absence of  
General Description  
source is switched on to sustain the  
memory until after VCC returns valid.  
The CMOS bq4011 is a nonvolatile  
262,144-bit static RAM organized as  
32,768 words by 8 bits. The integral  
control circuitry and lithium energy  
source provide reliable nonvolatility  
coupled with th e unlim ited write  
cycles of standard SRAM.  
power  
The bq4011 uses an extremely low  
s t a n dby cu r r en t CMOS SRAM,  
coupled with a small lithium coin cell  
to provide nonvolatility without long  
write-cycle times and the write-cycle  
limitations associated with EEPROM.  
Automatic write-protection  
during power-up/power-down  
cycles  
Industry-standard 28-pin 32K x  
8 pinout  
Th e con tr ol cir cu it r y con s ta n t ly  
monitors the single 5V supply for an  
ou t -of-t oler a n ce con dit ion . Wh en  
VCC falls out of tolerance, the SRAM  
is unconditionally write-protected to  
prevent inadvertent write operation.  
The bq4011 requires no external cir-  
cuitry and is socket-compatible with  
industry-standard SRAMs and most  
EPROMs and EEPROMs.  
Conventional SRAM operation;  
unlimited write cycles  
10-year minimum data retention  
in absence of power  
Battery internally isolated until  
power is applied  
Pin Connections  
Pin Names  
Block Diagram  
A0 –A14  
Address inputs  
DQ0–DQ7 Data input/output  
CE  
Chip enable input  
Output enable input  
Write enable input  
+5 volt supply input  
Ground  
OE  
WE  
VCC  
VSS  
Selection Guide  
Maximum  
Access  
Negative  
Supply  
Maximum  
Access  
Negative  
Supply  
Part  
Part  
Number  
Time (ns)  
Tolerance  
Number  
Time (ns)  
Tolerance  
bq4011Y-70  
70  
-10%  
-10%  
-10%  
-10%  
bq4011 -100  
bq4011Y -100  
bq4011Y -150  
bq4011Y -200  
100  
150  
200  
-5%  
-5%  
-5%  
100  
150  
200  
bq4011 -150  
bq4011 -200  
Aug. 1993 C  
1

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