BQ2203APN PDF预览

BQ2203APN

更新时间: 2025-07-19 22:39:39
品牌 Logo 应用领域
德州仪器 - TI 电源电路电池电源管理电路监视器光电二极管控制器
页数 文件大小 规格书
12页 83K
描述
NV Controller With Battery Monitor

BQ2203APN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP16,.3针数:16
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.44
Is Samacsys:N可调阈值:YES
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDIP-T16
长度:19.18 mm信道数量:1
功能数量:1端子数量:16
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP16,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:4.57 mm子类别:Power Management Circuits
最大供电电流 (Isup):6 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

BQ2203APN 数据手册

 浏览型号BQ2203APN的Datasheet PDF文件第2页浏览型号BQ2203APN的Datasheet PDF文件第3页浏览型号BQ2203APN的Datasheet PDF文件第4页浏览型号BQ2203APN的Datasheet PDF文件第5页浏览型号BQ2203APN的Datasheet PDF文件第6页浏览型号BQ2203APN的Datasheet PDF文件第7页 
bq2203A  
NV Controller With Battery Monitor  
Power for the external SRAMs is  
Features  
General Description  
switched from the V  
supply to the  
CC  
battery-backup supply as V  
de-  
The CMOS bq2203A SRAM Nonvolatile  
Controller With Battery Monitor pro-  
vides all the necessary functions for con-  
verting one or two banks of standard  
CMOS SRAM in t o n on vola t ile  
read/write memory. The bq2203A is  
compatible with the Personal Computer  
Memory Card International Association  
(P CMCIA) r ecom m en da t ion s for  
battery-backed static RAM memory  
cards.  
CC  
Power monitoring and switching  
for nonvolatile control of SRAMs  
cays. On a subsequent power-up, the  
s u p p ly is a u t om a t ica lly  
V
OU T  
switched from the backup supply to  
the V supply. The external SRAMs  
Write-protect control  
CC  
Battery-low and battery-fail indi-  
cators  
are write-protected until a power-  
valid condition exists. The reset out-  
put provides power-fail and power-on  
resets for the system. The battery  
monitor indicates battery-low and  
battery-fail conditions.  
Reset output for system power-on  
reset  
Input decoder for control of up to  
2 banks of SRAM  
During power-valid operation, the  
in pu t decoder select s on e of t wo  
banks of SRAM.  
A precision comparator monitors the 5V  
V
CC  
input for an out-of-tolerance condi-  
3-volt primary cell input  
tion. When out of tolerance is detected,  
the two conditioned chip-enable outputs  
are forced inactive to write-protect  
banks of SRAM.  
3-volt rechargeable battery in-  
put/output  
Pin Connections  
Pin Names  
VOUT  
RST  
THS  
CE  
CECON1  
CECON2  
Supply output  
Reset output  
Threshold select input  
chip-enable active low input  
Conditioned chip-enable outputs  
V
1
2
3
4
5
6
16  
15  
14  
13  
12  
11  
V
CC  
OUT  
BC  
P
BC  
CE  
CE  
CE  
S
,
NC  
A
A
Bank select input  
CON1  
CON2  
BCF  
BCL  
BCP  
BCS  
NC  
Battery fail push-pull output  
Battery low push-pull output  
3V backup supply input  
3V rechargeable backup supply input/output  
No connect  
BCF  
NC  
BCL  
THS  
7
8
10  
9
RST  
NC  
V
SS  
VCC  
VSS  
5-volt supply input  
Ground  
16-Pin Narrow DIP or SOIC  
PN220301.eps  
Functional Description  
Two banks of CMOS static RAM can be battery-backed us-  
If THS is tied to V , power-fail detection occurs at  
CC  
4.37V typical for 10% supply operation. The THS pin  
must be tied to V or V for proper operation.  
ing the V  
and the conditioned chip-enable output pins  
OUT  
from the bq2203A. As the voltage input V  
slews down  
SS  
CC  
CC  
during a power failure, the two conditioned chip-enable  
ou t pu t s, CE a n d CE , a r e for ced in a ct ive  
independent of the chip-enable input CE.  
If a memory access is in process to any of the two exter-  
nal banks of SRAM during power-fail detection, that  
memory cycle continues to completion before the memory  
is write-protected. If the memory cycle is not terminated  
CON1  
CON2  
This activity unconditionally write-protects external SRAM  
as V  
falls to an out-of-tolerance threshold V . V  
PFD PFD  
is  
within time t  
(150µs maximum), the two chip-enable  
CC  
WPT  
selected by the threshold select input pin, THS. If THS is  
outputs are unconditionally driven high, write-protecting  
the controlled SRAMs.  
tied to V , the power-fail detection occurs at 4.62V typical  
SS  
for 5% supply operation.  
Nov. 1994 B  
1

与BQ2203APN相关器件

型号 品牌 获取价格 描述 数据表
BQ2203APN-N TI

获取价格

1-CHANNEL POWER SUPPLY SUPPORT CKT, PDIP16, PLASTIC, DIP-16
BQ2203APNN TI

获取价格

NV Controller With Battery Monitor
BQ2203ASN TI

获取价格

NV Controller With Battery Monitor
BQ2203ASN-N TI

获取价格

1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16, SOIC-16
BQ2203ASNN TI

获取价格

NV Controller With Battery Monitor
BQ2203ASNTR TI

获取价格

SRAM Nonvolatile Controller IC for 2 SRAM Banks w/ Battery Monitor 16-SOIC 0 to 70
BQ2204 TI

获取价格

X4 SRAM Nonvolatile Controller Unit
BQ2204A TI

获取价格

X4 SRAM Nonvolatile Controller Unit
BQ2204APN TI

获取价格

X4 SRAM Nonvolatile Controller Unit
BQ2204APN-N TI

获取价格

暂无描述