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BPV23NFL

更新时间: 2024-02-08 19:03:39
品牌 Logo 应用领域
TEMIC 光电半导体
页数 文件大小 规格书
5页 107K
描述
PIN Photodiode, PLASTIC, 2 PIN

BPV23NFL 技术参数

生命周期:Transferred包装说明:PLASTIC, 2 PIN
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N其他特性:SIDE VIEW
配置:SINGLE最大暗电源:30 nA
红外线范围:YES标称光电流:0.065 mA
功能数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:PIN PHOTODIODE
峰值波长:940 nm最小反向击穿电压:60 V
形状:ROUND尺寸:4.5 mm
Base Number Matches:1

BPV23NFL 数据手册

 浏览型号BPV23NFL的Datasheet PDF文件第2页浏览型号BPV23NFL的Datasheet PDF文件第3页浏览型号BPV23NFL的Datasheet PDF文件第4页浏览型号BPV23NFL的Datasheet PDF文件第5页 
BPV23NFL  
Silicon PIN Photodiode  
Description  
BPV23NFL is a high speed and high sensitive PIN photo-  
diode in a plastic package with a spherical side view lens  
and extra long leads.  
The epoxy package itself is an IR filter, spectrally  
matched to GaAs on GaAs and GaAlAs on GaAlAs IR  
emitters ( = 950 nm, s ( = 875 nm) > 90 %).  
p
rel  
Lens radius and chip position are perfectly matched to the  
chip size, giving high sensitivity without compromising  
the viewing angle.  
In comparison with flat packages the spherical lens pack-  
age achieves a sensitivity improvement of 80%.  
Features  
94 8634  
2
Large radiant sensitive area (A = 5.7 mm )  
Wide viewing angle ϕ = ± 60  
Improved sensitivity  
Fast response times  
Low junction capacitance  
Plastic package with universal IR filter  
Long leads for special design requirements  
Applications  
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU.–, TSI.–, or  
TSH.–Series). High sensitivity detector for high data rate transmission systems.  
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range. This  
detector is optimized for infrared locking systems in automotive applications. Recommended infrared emitters are  
TSHA 5...–series.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Test Conditions  
25 C  
Symbol  
Value  
60  
Unit  
V
Reverse Voltage  
V
R
V
Power Dissipation  
T
amb  
P
215  
mW  
C
Junction Temperature  
T
100  
j
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
T
–55...+100  
–55...+100  
260  
C
amb  
T
C
stg  
t
5 s  
T
C
sd  
R
thJA  
350  
K/W  
TELEFUNKEN Semiconductors  
1 (5)  
Rev. A2, 15-Jul-96  

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