Datasheet > BPSM4448

BPSM4448

更新时间： 2024-11-01 12:26:59

品牌	Logo	应用领域
戈采 - FCI		二极管局域网
页数	文件大小	规格书
1页	39K
描述
500 mW SURFACE MOUNT EPITAXIAL PLANAR DIODE

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中文翻译

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BPSM4448 数据手册

Data Sheet

500 mW SURFACE MOUNT

EPITAXIAL PLANAR DIODE

MechanicalDimensions

a 2.0

b 1.2

c 1.2

d 0.5

e 1.0

unit=mm

+- .1mm

1.0

g 0.4

1 Termination-Gold Plated on Nickel

2 Cathode Band

Features

n LOW COST LOW PROFILE

PACKAGE

n PLANAR PROCESS

n 500 mW POWER DISSIPATION

n MEETS UL SPECIFICATION 94V-0

BPSM4148

Units

Maximum Ratings

Peak Reverse Voltage...V_RM

RMS Reverse Voltage...V_R(rms)

BPSM4148

100

Volts

............................................. 150 ...............................................

Average Forward Rectified Current...I_O

Non-Repetitive Peak Forward Surge Current...I_FSM

Power Dissipation...P_D

mAmps

............................................. 500 ...............................................

......................................... -25 to 85 ..........................................

......................................... -55 to 165 ..........................................

mAmps

°C

Operating Temperature Range...T_J

Storage Temperature Range...T_STRG

°C

Electrical Characteristics

Maximum Forward Voltage...V_F

@ I_F= 100 mA

............................................. 1.0 ...............................................

Volts

Maximum DC Reverse Current...I_R@ V_R= 75v

Maximum Frequency...f

µAmps

MHz

............................................. 5.0 ...............................................

............................................. 100 ...............................................

............................................. 4.0 ...............................................

Maximum Diode Capacitance...C_D

Maximum Reverse Recovery Time...T_RR

.01 uF

Device Under Test

Output

Trr

0.1 I_R

P_VV= 100nS

I_F

5K Ohms

I_R

50 Ohms

R_G= 50 Ohms

中文翻译

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