Datasheet > BM3G007MUV-LB

BM3G007MUV-LB

更新时间： 2024-03-03 10:11:14

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
29页	1442K
描述
This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an o

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BM3G007MUV-LB 数据手册

Nano Cap^TM

Datasheet

Power Stage

650 V GaN HEMT Power Stage

BM3G007MUV-LB

General Description

Key Specifications

This is the product guarantees long time support in

industrial market.

BM3G007MUV-LB provides an optimum solution for all

electronics systems that requires high power density

and efficiency.

By integrating the 650 V enhancement GaN HEMT and

silicon driver to ROHM’s original package, parasitic

inductance caused by a PCB and wire bonding is

reduced significantly compared to traditional discrete

solutions.

Owing to this, a high switching slew rate up to 150 V/ns

can be achieved. On the other hand, adjustable gate

drive strength contributes to low EMI, and various

protections and other additional functions provide

optimized cost, PCB size.

◼ Power Supply Voltage Range

VDD pin:

D pin:

IN pin:

6.25 V to 30 V

650 V (Max)

-0.6 V to +30 V

◼ VDD Operating Current @ 130 kHz: 650 μA (Typ)

◼ VDD Quiescent Current: 180 μA (Typ)

◼ Allowable Input Switching Frequency: 2 MHz (Max)

◼ Turn-on Delay Time:

◼ Turn-off Delay Time:

12 ns (Typ)

15 ns (Typ)

◼ Operating Temperature Range: -40 °C to +105 °C

◼ GaN HEMT D-S ON State Resistance: 70 mΩ (Typ)

This IC is designed to adapt major exist controllers, so

that it also can be used to replace the traditional discrete

power switches, such as super junction MOSFET.

Package

VQFN046V8080

W (Typ) x D (Typ) x H (Max)

8.0 mm x 8.0 mm x 1.0 mm

pitch 0.5 mm

Features

◼ Nano Cap^TMIntegrated Output Selectable 5 V LDO

◼ Long Time Support Product for Industrial Applications

◼ Wide Operating Range for VDD Pin Voltage

◼ Wide Operating Range for IN Pin Voltage

◼ Low VDD Quiescent and Operating Current

◼ Low Propagation Delay

◼ High dv/dt Immunity

◼ Adjustable Gate Drive Strength

◼ Power Good Signal Output

◼ VDD UVLO Protection

◼ Thermal Shutdown Protection

Applications

◼

Industrial Equipment, Power Supplies with High

Power Density, High Efficiency Demand, or Bridge

Topology such as Totem-pole PFC, LLC Power

Supply, Adaptor, etc.

Typical Application Circuit

RSR

GND

LDOEN

VCC

VDD

BM3G007MUV-LB

Diode

Bridge

Input

Filter

OUT

Controller

GND

LDO5V

GND

EXP

Nano Cap^TMis a trademark or a registered a trademark of ROHM Co., Ltd.

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0F1F0A100080-1-2

13.Jan.2023 Rev.001

1/26

12 3 4 5 6 7...29

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