Datasheet > BM3G015MUV-LB

BM3G015MUV-LB

更新时间： 2024-03-03 10:10:49

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
29页	1449K
描述
This is the product guarantees long time support in industrial market. BM3G015MUV-LB provides an o

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BM3G015MUV-LB 数据手册

Nano Cap^TM

Datasheet

Power Stage

650 V GaN HEMT Power Stage

BM3G015MUV-LB

General Description

Key Specifications

This is the product guarantees long time support in

industrial market.

BM3G015MUV-LB provides an optimum solution for all

electronics systems that requires high power density

and efficiency.

By integrating the 650 V enhancement GaN HEMT and

silicon driver to ROHM’s original package, parasitic

inductance caused by a PCB and wire bonding is

reduced significantly compared to traditional discrete

solutions.

Owing to this, a high switching slew rate up to 150 V/ns

can be achieved. On the other hand, adjustable gate

drive strength contributes to low EMI, and various

protections and other additional functions provide

optimized cost, PCB size.

◼ Power Supply Voltage Range

VDD pin:

D pin:

IN pin:

6.25 V to 30 V

650 V (Max)

-0.6 V to +30 V

◼ VDD Operating Current @ 130 kHz: 450 μA (Typ)

◼ VDD Quiescent Current: 150 μA (Typ)

◼ Allowable Input Switching Frequency: 2 MHz (Max)

◼ Turn-on Delay Time:

◼ Turn-off Delay Time:

11 ns (Typ)

15 ns (Typ)

◼ Operating Temperature Range: -40 °C to +105 °C

◼ GaN HEMT D-S ON State Resistance:150 mΩ (Typ)

This IC is designed to adapt major exist controllers, so

that it also can be used to replace the traditional discrete

power switches, such as super junction MOSFET.

Package

VQFN046V8080

W (Typ) x D (Typ) x H (Max)

8.0 mm x 8.0 mm x 1.0 mm

pitch 0.5 mm

Features

◼ Nano Cap^TMIntegrated Output Selectable 5 V LDO

◼ Long Time Support Product for Industrial Applications

◼ Wide Operating Range for VDD Pin Voltage

◼ Wide Operating Range for IN Pin Voltage

◼ Low VDD Quiescent and Operating Current

◼ Low Propagation Delay

◼ High dv/dt Immunity

◼ Adjustable Gate Drive Strength

◼ Power Good Signal Output

◼ VDD UVLO Protection

◼ Thermal Shutdown Protection

Applications

◼

Industrial Equipment, Power Supplies with High

Power Density, High Efficiency Demand, or Bridge

Topology such as Totem-pole PFC, LLC Power

Supply, Adaptor, etc.

Typical Application Circuit

RSR

GND

LDOEN

VCC

VDD

BM3G015MUV-LB

Diode

Bridge

Input

Filter

OUT

Controller

GND

LDO5V

GND

EXP

Nano Cap^TMis a trademark or a registered a trademark of ROHM Co., Ltd.

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0F1F0A100090-1-2

13.Jan.2023 Rev.001

1/26

12 3 4 5 6 7...29

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