Datasheet > BM3G015MUV-LB

BM3G015MUV-LB

更新时间： 2024-03-03 10:10:49

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罗姆 - ROHM		/
页数	文件大小	规格书
29页	1449K
描述
This is the product guarantees long time support in industrial market. BM3G015MUV-LB provides an o

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BM3G015MUV-LB 数据手册

BM3G015MUV-LB

Feature Descriptions – continued

2.5

Drive Strength Setting

Generally, there is a tradeoff between efficiency and EMI. A higher switching slew rate reduces the switching loss, in

the other hand, it also increases the switching noise.

By adjusting a resistor R_SRbetween the RSR pin and the GND pin, the turn-on slew rate SR_ONcan be selected freely

from 28 V/ns to 100 V/ns.

The larger the value of R_SR, the higher the value of SR_ON

When the value of R_SRis 100 kΩ or more, the value of SR_ONis clamped to a constant value.

It allows users to optimize the switching speed according to specific circumstance, such as an EMI filter space, PCB

layout, etc.

Refer to Figure 28 for the relationship between R_SRand SR_ON

2.6

VREG, VDD Protections, Thermal Shutdown

This IC has internal regulators, some protection circuits.

www.rohm.com

TSZ22111 • 15 • 001

TSZ02201-0F1F0A100090-1-2

13.Jan.2023 Rev.001

5/26

1 2 3 456 7 8...29

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