Datasheet
Built-in Low Consumption and High Accuracy Shunt Regulator
High Efficiency, Low Standby Power and
CCM Corresponding
Secondary Side Synchronous Rectification
Controller IC
BM1R00178F
General Description
Key Specifications
BM1R00178F is synchronous rectification controller to be
used in the secondary side output. It has a built-in low
consumption and high accuracy shunt regulator, which
reduces standby power. Since the shunt regulator is
made up of completely independent chips, it can operate
as a GND reference even when it is used with High Side.
At continuous conduction mode (CCM) operation, further
space saving can be realized when operating without the
input switching synchronizing signal of the primary side.
BM1R00178F also feature a wide operating supply
voltage of 2.7V to 32V for various output applications.
In addition, by adopting the high voltage 120V (Max)
process, it is possible to monitor the drain voltage directly.
Supply Voltage
Circuit Current (No Switching):
DRAIN Monitor Pin Absolute Voltage: 120V(Max)
Operating Temperature Range: -40°C to +105°C
2.7V to 32V
800µA(Typ)
Package
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
SOP8
Features
Built-in Low Consumption and High Accuracy Shunt
Regulator, which Reduces Standby Power
Synchronous Rectification FET Layout: High/Low
Side
120V (Max) High Voltage Process DRAIN Monitor Pin
Wide Supply Voltage Range of 2.7V to 32V
Supports Drive Type: PWM, QR and LLC Controller
etc.
Applications
No Input Required on the Primary-Side at CCM
Built-in Over Voltage Protection for SH_IN and
SH_OUT Pin
AC/DC Output Power Conversion Applications:
Charger, Adapter, TV, Rice Cooker, Humidifier, Air
Conditioning, Vacuum Cleaner, etc.
Built-in Thermal Shutdown Function
Typical Application Circuits
D2
M1
CVCC
VOUT
VOUT
CVCC
RDRAIN1
DRAIN
VCC
RDRAIN2
LFB1
DRAIN
VCC
Primary
Controler
D1
SR_GND
D1
SH_IN
+
-
SR_GND
SH_IN
COUT
Primary
Controler
GATE
SH_OUT
SH_GND
+
-
COUT
GATE
SH_OUT
SH_GND
RMAX_TON
R1 C1
MAX_TON
MAX_TON
GND
R1
C1
RMAX_TON
GND
M1
Figure 1. Flyback Application Circuit (Low side FET)
Figure 2. Flyback Application Circuit (High side FET)
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
.
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TSZ02201-0F2F0A200340-1-2
06.Feb.2018 Rev.001
© 2018 ROHM Co., Ltd. All rights reserved.
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