Datasheet > BLM12P03

BLM12P03

更新时间： 2024-11-06 14:54:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
7页	1164K
描述
The BLM12P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM12P03 数据手册

Pb Free Product

BLM12P03

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The BLM12P03 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V.

Schematic diagram

Marking and pin Assignment

PDFN3.3*3.3 top view

GENERAL FEATURES

● V_DS= -30V,I_D= -20A

R_DS(ON)< 25mΩ @ V_GS=-4.5V

R_DS(ON)< 15mΩ @ V_GS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Application

●Battery Switch

●Load Switch

●Power Management

Package Marking And Ordering Information

Device Marking

Ordering Codes

Package

Product Code

Packing

M12P03

BLM12P03-R

PDFN 3.3*3.3

BLM12P03

Reel

Absolute Maximum Ratings (TA=25℃

Parameter

unless otherwise noted)

Symbol

VDS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

-20

I_D

Drain Current-Pulsed

(Note 1)

(Note 2)

-80

I_DM

10.6

Maximum Power Dissipation(Tc=25℃)

Maximum Power Dissipation(Tc=100℃)

Single pulse avalanche energy

Operating Junction and Storage Temperature Range

P_D

6.4

171

E_AS

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

R_θJA

11.8

℃/W

Thermal Resistance,Junction-to-Ambient

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