Datasheet > BLG60T65FDL

BLG60T65FDL

更新时间： 2023-12-06 20:08:51

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管
页数	文件大小	规格书
16页	1143K
描述
BLG60T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications.

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BLG60T65FDL 数据手册

BLG60T65FDL

IGBT

5. Characteristics Curves

Figure 1. Forward Bias Safe Operating Area

for TO247/TO3PN

Figure 2. Forward Bias Safe Operating Area

for TO3PF

Figure 3. Power Dissipation vs Case Temperature Figure 4. Power Dissipation vs Case Temperature

for TO247/TO3PN for TO3PF

BLG60T65FDL

Rev2.0

06/2023

www.belling.com.cn

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