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BLA1011S-200R PDF预览

BLA1011S-200R

更新时间: 2024-11-12 06:42:11
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管电子航空
页数 文件大小 规格书
13页 120K
描述
Avionics LDMOS transistors

BLA1011S-200R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLATPACK, R-CDFP-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.75
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:75 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFP-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLA1011S-200R 数据手册

 浏览型号BLA1011S-200R的Datasheet PDF文件第2页浏览型号BLA1011S-200R的Datasheet PDF文件第3页浏览型号BLA1011S-200R的Datasheet PDF文件第4页浏览型号BLA1011S-200R的Datasheet PDF文件第5页浏览型号BLA1011S-200R的Datasheet PDF文件第6页浏览型号BLA1011S-200R的Datasheet PDF文件第7页 
BLA1011-200R; BLA1011S-200R  
Avionics LDMOS transistors  
Rev. 01 — 23 February 2010  
Product data sheet  
1. Product profile  
1.1 General description  
200 W LDMOS avionics power transistor for transmitter applications at frequencies from  
1030 MHz to 1090 MHz.  
Table 1.  
Typical performance  
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA;  
typical values.  
Mode of operation  
Conditions  
VDS  
(V)  
PL  
(W)  
Gp  
(dB) (%)  
ηD  
tr  
(ns)  
tf  
(ns)  
Pulsed class-AB:  
1030 MHz to 1090 MHz  
tp = 50 μs; δ = 2 %  
tp = 128 μs; δ = 2 %  
tp = 340 μs; δ = 1 %  
36  
36  
36  
200  
250  
250  
15  
14  
14  
50  
50  
50  
35  
35  
35  
6
6
6
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
„ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,  
a supply voltage of 36 V and an IDq of 150 mA:  
‹ Load power 200 W  
‹ Gain 13 dB  
‹ Efficiency 45 %  
‹ Rise time 50 ns  
‹ Fall time 50 ns  
„ High power gain  
„ Easy power control  
„ Excellent ruggedness  
„ Source on mounting flange eliminates DC isolators, reducing common mode  
inductance  
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  

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