5秒后页面跳转
BLA0912-250 PDF预览

BLA0912-250

更新时间: 2024-09-23 22:25:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管电子航空
页数 文件大小 规格书
12页 75K
描述
Avionics LDMOS transistor

BLA0912-250 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:CERAMIC PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.75
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:75 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):700 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLA0912-250 数据手册

 浏览型号BLA0912-250的Datasheet PDF文件第2页浏览型号BLA0912-250的Datasheet PDF文件第3页浏览型号BLA0912-250的Datasheet PDF文件第4页浏览型号BLA0912-250的Datasheet PDF文件第5页浏览型号BLA0912-250的Datasheet PDF文件第6页浏览型号BLA0912-250的Datasheet PDF文件第7页 
BLA0912-250  
Avionics LDMOS transistor  
Rev. 02 — 22 July 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead  
SOT502A flange package with a ceramic cap. The common source is connected to the  
mounting flange.  
1.2 Features  
High power gain  
Easy power control  
Excellent ruggedness  
Source on mounting base eliminates DC isolators, reducing common mode  
inductance.  
1.3 Applications  
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such  
as Mode-S, TCAS and JTIDS, DME or TACAN.  
1.4 Quick reference data  
Table 1:  
Quick reference data  
Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency  
band. Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise.  
Mode of operation  
Conditions  
VDS PL  
Gp  
Gp ηD  
Pulse droop tr  
tf  
Zth(j-h) ϕR  
(V) (W) (dB) (dB) (%) (dB)  
(ns) (ns) (K/W) (deg)  
tp = 100 µs; δ = 10 % 36  
250 13.5 0.8 50  
250 14.0 0.8 50  
0.1  
0
25  
25  
6
6
0.18 ±5  
0.07 ±5  
All modes  
TCAS:  
tp = 32 µs; δ = 0.1 %  
36  
1030 MHz to 1090 MHz  
Mode-S:  
1030 MHz to 1090 MHz  
tp = 128 µs; δ = 2 %  
tp = 340 µs; δ = 1 %  
36  
36  
250 13.5 0.8 50  
250 13.5 0.8 50  
200 13.0 1.2 45  
0.1  
0.2  
0.2  
25  
25  
25  
6
6
6
0.15 ±5  
0.20 ±5  
0.45 ±5  
JTIDS:  
tp = 3.3 ms; δ = 22 % 36  
960 MHz to 1215 MHz  

BLA0912-250 替代型号

型号 品牌 替代类型 描述 数据表
BLA0912-250,112 NXP

功能相似

BLA0912-250

与BLA0912-250相关器件

型号 品牌 获取价格 描述 数据表
BLA0912-250,112 NXP

获取价格

BLA0912-250
BLA0912-250R NXP

获取价格

Avionics LDMOS power transistor
BLA0912-250R,112 ETC

获取价格

RF FET LDMOS 75V 13DB SOT502A
BLA1 BOT

获取价格

1Way 3mm LED Standoff
BLA1_12 BOT

获取价格

1Way 3mm LED Standoff
BLA10 BOT

获取价格

3mm LED STAND-OFF
BLA10_12 BOT

获取价格

3mm LED STAND-OFF
BLA1011(S)-200R NXP

获取价格

RF Manual 16th edition
BLA1011-10 NXP

获取价格

Avionics LDMOS transistor
BLA1011-10,112 ETC

获取价格

RF FET LDMOS 75V 15DB SOT467C