Datasheet > BLA1011-300

BLA1011-300

更新时间： 2024-09-24 03:22:11

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管电子航空
页数	文件大小	规格书
11页	65K
描述
Avionics LDMOS transistors

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BLA1011-300 数据手册

BLA1011-300

Avionics LDMOS transistors

Rev. 02 — 5 February 2008

Product data sheet

1. Product proﬁle

1.1 General description

300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from

1030 MHz to 1090 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a common source class-AB production test circuit; t_p= 50 µs;

δ = 2 %.

Mode of operation

I_Dq

V_DS

(V)

P_L

G_p

η_D

(MHz)

(mA)

150

(W)

300

(dB)

16.5

(%)

Pulsed class-AB

1030 to 1090

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply

voltage of 32 V, an I_Dqof 150 mA, a t_pof 50 µs and a δ of 2 %:

N Output power = 300 W

N Power gain = 16.5 dB (typ)

N Efﬁciency = 57 % (typ)

I Easy power control

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for operation in 1030 MHz to 1090 MHz band

I Internally matched for ease of use

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

I RF power ampliﬁers for Avionics applications in the 1030 MHz to 1090 MHz frequency

band

12 3 4 5 6 7...11

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