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BL2231L PDF预览

BL2231L

更新时间: 2024-11-06 17:01:35
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 876K
描述
0.8A, 20V, 0.45W, N Channel, Small Signal MOSFETs

BL2231L 数据手册

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Product Specification  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
BL2231L  
Extremely low threshold voltage.  
ESD Protected.  
DFN1006-3  
ORDERING INFORMATION  
Type No.  
BL2231L  
Marking  
K21  
Package Code  
DFN1006-3  
MAXIMUM RATING @ Ta=25unless otherwise specified (Note 1)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Value  
20  
Units  
V
Drain-Source voltage  
±10  
800  
Gate -Source voltage  
V
Drain current (Continuous)  
Drain Current (Pulsed) (Note 1)  
Maximum Drain Currnet-Continue  
Thermal Resistance, Junction-to-Ambient  
mA  
mA  
mW  
°C/W  
IDM  
1000  
450  
PD  
Rθ  
279  
JA  
TJ  
Operating Junction Temperature  
Storage Temperature Range  
+150  
TSTG  
-55 to +150  
MTM0039A  
www.gmesemi.com  
1

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