Datasheet > BL1N60K

BL1N60K

更新时间： 2024-04-09 18:59:29

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	516K
描述
1.25A, 600V, 31W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL1N60K 数据手册

N-Channel Enhancement Mode MOSFET

BL1N60K

Features



Fast switching

ESD improved capability

Low gate charge

Low reverse transfer capacitances

JESD22-A114-B ESD rating of class 1C per human body model

Application



Power switch circuit of adaptor and charger

Mechanical Data



Case: TO-220AB

TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL1N60K

TO-220AB

50 pcs / Tube

1N60K

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

600

Gate-to-Source Voltage

±30

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

1.25

I_D

0.8

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1265A: June 2023 [2.0]

www.gmesemi.com

12 3 4 5

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