Datasheet > BL200N15THD

BL200N15THD

更新时间： 2024-04-09 19:02:09

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	430K
描述
56A, 150V, 136W, N Channel, Power MOSFETs

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BL200N15THD 数据手册

N-Channel Enhancement Mode MOSFET

BL200N15THD

Features



High speed power switching

Enhanced body diode dv/dt capability

Enhanced avalanche ruggednes

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

200N15THD

BL200N15THD

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

Maximum Ratings (@ T_J= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

150

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C, Silicon limit)

Continuous Drain Current (T_C= 100°C Silicon limit)

Pulsed Drain Current

I_D

I_DM

E_AS

180

Single Pulse Avalanche Energy(L = 0.4mH, T_C= 25°C)

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

136

°C/W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

1.1

-55 ~ +175

T_STG

°C

MTM0430A: March 2021

www.gmesemi.com

12 3 4 5

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