Datasheet > BL20N06D

BL20N06D

更新时间： 2024-04-09 18:58:32

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	643K
描述
20A, 60V, 60W, N Channel, Power MOSFETs

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数据手册

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BL20N06D 数据手册

N-Channel Enhancement Mode MOSFET

BL20N06I BL20N06D

Features



Lower R_DS(on)

Lower V_DS(on)

Lower capacitances

Lower total gate charge

Lower and tighter V_SD

Lower diode reverse recovery time

Lower reverse recovery stored charge

Mechanical Data



Case: TO-251, TO-252

BL20N06I

TO-251

BL20N06D

TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

BL20N06I

Package

TO-251

Shipping Quantity

Marking Code

80 pcs / Tube

20N06I

BL20N06D

TO-252

80pcs / Tube or 2500pcs / Tape & Reel

20N06D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C , Silicon limit)

Continuous Drain Current (T_C= 100°C Silicon limit)

Single Pulse Avalanche Energy ^*1

I_D

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

Thermal Resistance Junction-to-Air ^*3

Thermal Resistance Junction-to-Air ^*4

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

°C /W

°C

110

2.5

-55 ~ +150

T_STG

°C

MTM0118A: May 2023 [1.2]

www.gmesemi.com

12 3 4 5

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