Datasheet > BL20N65

BL20N65

更新时间： 2024-11-21 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	923K
描述
BL20N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL20N65 数据手册

BL20N65

Power MOSFET

1．Description

BL20N65, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

650

Unit

R_DS(ON).Typ

Qg._Typ

0.39

Ω

FEATURES



Fast Switching

Low Crss (typical 15pF )

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL20N65-P

BL20N65-A

BL20N65-W

BL20N65-F

Package

Product Code

20N65

Packing

Tube

TO-220

TO-220F

TO-3PN

TO-247

BL20N65-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL20N65:650V 20A

(2) A:TO-220F P:TO-220

W:TO-3PN F:TO-247

BL20N65

Rev 1.0

4/2019

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