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BL2038D-3DL8 PDF预览

BL2038D-3DL8

更新时间: 2024-09-25 17:01:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
8页 708K
描述
20V, -20V, N+P Channel MOSFETs

BL2038D-3DL8 数据手册

 浏览型号BL2038D-3DL8的Datasheet PDF文件第2页浏览型号BL2038D-3DL8的Datasheet PDF文件第3页浏览型号BL2038D-3DL8的Datasheet PDF文件第4页浏览型号BL2038D-3DL8的Datasheet PDF文件第5页浏览型号BL2038D-3DL8的Datasheet PDF文件第6页浏览型号BL2038D-3DL8的Datasheet PDF文件第7页 
NP Channel Enhancement Mode MOSFET  
BL2038D-3DL8  
Features  
Complementary P + N channel  
Advanced trench technology  
Exceptional on-resistance and maximum DC current capability  
Mechanical Data  
Case: PDFN3×3-8LC  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN3×3-8LC  
Ordering Information  
Part Number  
Package  
PDFN3×3-8LC  
Shipping Quantity  
Marking Code  
2038D  
BL2038D-3DL8  
5000 pcs / Tape & Reel  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Q1  
20  
Q2  
-20  
±12  
-3.3  
-2.6  
-15  
2
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
VGSS  
±12  
4.7  
3.7  
20  
V
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 70°C ) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C ) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
A
ID  
A
IDM  
EAS  
PD  
A
2
mJ  
W
°C  
°C  
2.1  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
RθJC  
RθJA  
-
-
-
-
8
°C /W  
°C /W  
Thermal Resistance Junction-to-Air *1  
60  
Notes:  
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper  
MTM1409A: September 2023 [2.0]  
www.gmesemi.com  
1

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