Datasheet > BL065N085TH

BL065N085TH

更新时间： 2024-11-25 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	740K
描述
125A, 85V, 180W, N Channel, Power MOSFETs

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BL065N085TH 数据手册

N-Channel Enhancement Mode MOSFET

BL065N085TH

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Mechanical Da ta



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

TO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL065N085TH

TO-220AB

50 pcs / Tube

055N085

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

125

Continuous Drain Current (T_C= 25°C) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

365

176

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

P_D

Value

180

Unit

Power Dissipation (T_C= 25°C)

Thermal Resistance Junction-to-Air (steady state)

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C/W

°C

0.65

-55 to +150

T_STG

°C

MTM0387A: November 2020

www.gmesemi.com

12 3 4 5

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