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BL075P03-S8 PDF预览

BL075P03-S8

更新时间: 2024-09-25 17:02:15
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 729K
描述
14A, 30V, 2.5W, P Channel, Power MOSFETs

BL075P03-S8 数据手册

 浏览型号BL075P03-S8的Datasheet PDF文件第2页浏览型号BL075P03-S8的Datasheet PDF文件第3页浏览型号BL075P03-S8的Datasheet PDF文件第4页浏览型号BL075P03-S8的Datasheet PDF文件第5页 
P-Channel Enhancement Mode MOSFET  
BL075P03-S8  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Advanced high cell density trench technology  
JESD22-A114-B ESD rating of class 1C per human body model  
Mechanical Data  
Case: SOP-8  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
SOP-8  
Ordering Information  
Part Number  
Package  
SOP-8  
Shipping Quantity  
Marking Code  
BL075P03-S8  
4000 pcs / Tape & Reel  
075P03  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-30  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TA = 25°C)  
Continuous Drain Current (TA = 100°C)  
Pulsed Drain Current (tp = 10μs, TA = 25°C)  
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C)  
-14  
A
ID  
-8.8  
A
IDM  
EAS  
PD  
-56  
A
127  
mJ  
W
°C  
°C  
2.5  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
14  
35  
25  
50  
°C /W  
°C /W  
MTM1062A: May 2023 [2.0]  
www.gmesemi.com  
1

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